Computational microelectronics (307 risultati)

Hardcover. Condizione: Fair. Verschmutzung / Wasserschaden; Abnutzung / Risse - leicht; Gebrochener Buchrücken / Seiten oder Softcover umgeknickt. Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.…

Hardcover. Condizione: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

Condizione: New.

Hard Cover. Condizione: Good. No Jacket. Hard cover. Usual ex-library features. The interior is clean and tight. Binding is good. Cover shows slight wear. Library label taped on front. 193 pages. Ex-Library.

Condizione: New.

Condizione: As New. Unread book in perfect condition.

Condizione: As New. Unread book in perfect condition.

Hardcover. Condizione: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority.

Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Condizione: New. In.

Condizione: New. In.

Condizione: New. In.

Condizione: New. In.

Condizione: New. In.

Condizione: New.

Condizione: Good. Former library copy. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.

Condizione: New.

Condizione: New. pp. 240.

Condizione: New. pp. 288.

Condizione: New. pp. 324.

Condizione: New. pp. 332.

Condizione: As New. Unread book in perfect condition.

gebundene Ausgabe. Condizione: Gut. 351 Seiten Der Erhaltungszustand des hier angebotenen Werks ist trotz seiner Bibliotheksnutzung sauber. Es befindet sich neben dem Rückenschild lediglich ein Bibliotheksstempel im Buch; ordnungsgemäß entwidmet. Buchblock vorne leicht gebrochen, aber weiter stabil. In ENGLISCHER Sprache. Sprache: Englisch Gewicht in Gramm: 760. …

Condizione: As New. Unread book in perfect condition.

hardcover. Condizione: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority.

Condizione: New.

Paperback. Condizione: Brand New. 240 pages. 9.61x6.69x0.55 inches. In Stock.

Paperback. Condizione: Brand New. 288 pages. 9.61x6.69x0.65 inches. In Stock.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book represents a comprehensive text devoted to charge transport at semiconductor interfaces and its consideration in device simulation by interface and boundary conditions. It contains a broad review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent deriva tion of interface or boundary conditions for semiconductor device simula tion. The book is of interest with respect to a wide range of electronic engineering activities, as process design, device design, process character ization, research in microelectronics, or device simulator development. It is also useful for students and lecturers in courses of electronic engineering, and it supplements the library of technically oriented solid-state physicists. The deepest roots of this book date back to the mid-seventies. Being a student of electrical engineering, who was exposed for the first time to the material of semiconductor device electronics, I was puzzled by noticing that much emphasis was put on a thorough introduction and understand ing of the basic semiconductor equations, while the boundary conditions for these equations received very much less attention. Until today on many occasions one could get the impression that boundary conditions are unimportant accessories; they do not stand on their own besides the bulk transport equations, although it is clear that they are of course a necessary complement of these.…