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PAP. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Editore: Taylor & Francis Ltd, London, 2025
ISBN 10: 1032670266 ISBN 13: 9781032670263
Lingua: Inglese
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Paperback. Condizione: new. Paperback. This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology. The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Editore: Taylor & Francis Ltd, London, 2025
ISBN 10: 1032670266 ISBN 13: 9781032670263
Lingua: Inglese
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Aggiungi al carrelloPaperback. Condizione: new. Paperback. This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology. The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Editore: Taylor & Francis Ltd, London, 2025
ISBN 10: 1032670266 ISBN 13: 9781032670263
Lingua: Inglese
Da: AussieBookSeller, Truganina, VIC, Australia
EUR 91,15
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Aggiungi al carrelloPaperback. Condizione: new. Paperback. This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology. The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
Da: PBShop.store UK, Fairford, GLOS, Regno Unito
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Da: PBShop.store US, Wood Dale, IL, U.S.A.
HRD. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Da: preigu, Osnabrück, Germania
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Advanced MOS Devices and their Circuit Applications | Ankur Beohar (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2025 | CRC Press | EAN 9781032670263 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.
Da: Biblios, Frankfurt am main, HESSE, Germania
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Da: AHA-BUCH GmbH, Einbeck, Germania
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.
Da: moluna, Greven, Germania
EUR 113,56
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Dr. Ankur Beohar (Senior member IEEE) obtaineda PhD degree in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2018. After getting his PhD, he worked as a postdoctoral fellow in the Device Model.