Editore: KTK Scientific Publishers, Tokyo, 1987
ISBN 10: 9027723524 ISBN 13: 9789027723529
Lingua: Inglese
Da: Amnesty Bookshop, Malvern, Great Malvern, Regno Unito
Prima edizione
EUR 51,99
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Aggiungi al carrelloHb without Dj. Condizione: Fine. First Edition. Contains nearly all the papers presented at the Symposium on "Defects and Qualities of Semiconductors" held in Tokyo in May 1984. In immaculate condition throughout. All profits to Amnesty International. Size: 15.5cm - 23.3cm with 261pp.
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
EUR 75,71
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Aggiungi al carrelloCondizione: New.
Da: Books Puddle, New York, NY, U.S.A.
EUR 76,47
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Aggiungi al carrelloCondizione: New. pp. 300.
Da: Majestic Books, Hounslow, Regno Unito
EUR 77,27
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Aggiungi al carrelloCondizione: New. pp. 300 Illus.
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 75,77
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Aggiungi al carrelloCondizione: New. In.
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 79,12
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Aggiungi al carrelloCondizione: New. pp. 300.
Da: California Books, Miami, FL, U.S.A.
EUR 93,98
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Aggiungi al carrelloCondizione: New.
Da: Chiron Media, Wallingford, Regno Unito
EUR 74,98
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Aggiungi al carrelloPF. Condizione: New.
Editore: D. Reidel Publishing Company, 2013
ISBN 10: 9401086168 ISBN 13: 9789401086165
Lingua: Inglese
Da: Revaluation Books, Exeter, Regno Unito
EUR 111,27
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Aggiungi al carrelloPaperback. Condizione: Brand New. 272 pages. 9.02x5.99x0.62 inches. In Stock.
EUR 68,30
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Defects and Properties of Semiconductors | Defect Engineering | J. Chikawa (u. a.) | Taschenbuch | 300 S. | Englisch | 2011 | Springer Netherland | EAN 9789401086165 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Editore: Springer Netherlands, Springer Netherlands, 2011
ISBN 10: 9401086168 ISBN 13: 9789401086165
Lingua: Inglese
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 80,15
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains nearly all of the papers presented at the Symposium on 'Defects and Qualities of Semiconductors' which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project 'Quality Developement of Semiconductors by Utilization of Crystal Defects' sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term 'DEFECT ENGINEERING' was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 320,20
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Aggiungi al carrelloHardcover. Condizione: Very Good. Very Good. book.