Editore: New York, Plenum Press 1984 figures, 1984
Da: Antiquarian Bookshop Klikspaan, Leiden, Paesi Bassi
Prima edizione
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Aggiungi al carrello1st ed - With index. - Hardcover.
Lingua: Inglese
Editore: Berlin, Heidelberg, New York: Springer, 1988
ISBN 10: 3540191097 ISBN 13: 9783540191094
Da: Roland Antiquariat UG haftungsbeschränkt, Weinheim, Germania
EUR 15,00
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Aggiungi al carrelloHardcover/Pappeinband. 287 p.; 190 fig. Good condition. Nam inside front cover. Reading pages are clean and without marks. Book shows slight signs of storage and usage. No dust jacket. Otherwise good copy. 9783540191094 Sprache: Englisch Gewicht in Gramm: 1000.
Da: Liberty Book Shop, Avis, PA, U.S.A.
Prima edizione
hardcover. Condizione: Very Good+. Condizione sovraccoperta: No Dust Jacket. 1st US ed. Printed cloth, cond, sl edge rubbing proceedings of 5th international Winter School, Mauterndorf, Austria, February 1988; HB, lg octavo; 287 pages.
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. The Physics of Submicron Structures | Harold L. Grubin | Taschenbuch | x | Englisch | 2011 | Springer | EAN 9781461297147 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Lingua: Inglese
Editore: Springer US, Springer New York, 2011
ISBN 10: 1461297141 ISBN 13: 9781461297147
Da: AHA-BUCH GmbH, Einbeck, Germania
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
Da: Ria Christie Collections, Uxbridge, Regno Unito
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Lingua: Inglese
Editore: Springer Berlin Heidelberg, 2012
ISBN 10: 3642834337 ISBN 13: 9783642834332
Da: Revaluation Books, Exeter, Regno Unito
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Aggiungi al carrelloPaperback. Condizione: Brand New. reprint edition. 297 pages. 9.25x6.10x0.70 inches. In Stock.
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ISBN 10: 3642834337 ISBN 13: 9783642834332
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume presents a discussion of the latest results in the physics of low-dimensional structures. At the winter school major breakthroughs were reported, and some of the excitement of the participants is reflected in the contributions. The topics treated range from the fabrication of microstructures and the physical background of future semiconductor devices to vertical transport in nanostructures, universal conductance fluctuations, and the transition from two-dimensional to one-dimensional conduction in semiconductor structures.
Da: Mispah books, Redhill, SURRE, Regno Unito
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Lingua: Inglese
Editore: Springer US, Springer Okt 2011, 2011
ISBN 10: 1461297141 ISBN 13: 9781461297147
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F. 376 pp. Englisch.
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Lingua: Inglese
Editore: Springer-Verlag New York Inc., 2011
ISBN 10: 1461297141 ISBN 13: 9781461297147
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the.
Lingua: Inglese
Editore: Springer US, Springer Okt 2011, 2011
ISBN 10: 1461297141 ISBN 13: 9781461297147
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 53,49
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 376 pp. Englisch.
Lingua: Inglese
Editore: Springer Berlin Heidelberg Dez 2011, 2011
ISBN 10: 3642834337 ISBN 13: 9783642834332
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 106,99
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This volume presents a discussion of the latest results in the physics of low-dimensional structures. At the winter school major breakthroughs were reported, and some of the excitement of the participants is reflected in the contributions. The topics treated range from the fabrication of microstructures and the physical background of future semiconductor devices to vertical transport in nanostructures, universal conductance fluctuations, and the transition from two-dimensional to one-dimensional conduction in semiconductor structures. 300 pp. Englisch.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, 2011
ISBN 10: 3642834337 ISBN 13: 9783642834332
Da: moluna, Greven, Germania
EUR 92,27
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This volume presents a discussion of the latest results in the physics of low-dimensional structures. At the winter school major breakthroughs were reported, and some of the excitement of the participants is reflected in the contributions. The topics treate.
Lingua: Inglese
Editore: Springer, Springer Vieweg Dez 2011, 2011
ISBN 10: 3642834337 ISBN 13: 9783642834332
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 106,99
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This volume presents a discussion of the latest results in the physics of low-dimensional structures. At the winter school major breakthroughs were reported, and some of the excitement of the participants is reflected in the contributions. The topics treated range from the fabrication of microstructures and the physical background of future semiconductor devices to vertical transport in nanostructures, universal conductance fluctuations, and the transition from two-dimensional to one-dimensional conduction in semiconductor structures.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 300 pp. Englisch.