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Growth, Characterisation & Applications of Bulk Ii-Vis: Proceedings of Symposium C on Growth, Characterisation & Applications of Bulk Ii-Vis of the ... Spring Conference, Strasbourg, France, June - Rilegato
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The papers collected in these Proceedings were presented at the Symposium on Growth, Characterisation and Applications of Bulk II–VIs held at the Congress Center of Strasbourg on June 16-18 1998 in the framework of the E-MRS Spring Meeting dedicated to Advanced Materials.
More than 80 scientists from 14 countries attended this two and a half day symposium which discussed problems dealing with the growth, characterisation and applications of bulk II–VI materials, mainly of the two key semiconductors CdTe and ZnSe.
The symposium was divided into several sessions covering the following topics: growth of CdTe, growth of other wide-gap compounds, narrow-gap compounds, doping, defects and diffusion, nuclear detection and solar cells/photorefractivity. It consisted of a series of invited lectures (8), shorter oral communications (25) and a poster session (33).
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Growth, Characterization and Applications of Bulk II-VIs (European Materials Research Society Symposia Proceedings)
Editore:
Elsevier Science, 1999
ISBN 10: 0080436056
ISBN 13: 9780080436050
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Prima edizione
Da: killarneybooks, Inagh, CLARE, Irlanda
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Hardcover. Condizione: Very Good. 1st Edition. Oversized hardcover, weight: 1225g, xi + pages 397-748, NOT ex-library. Gentle handling wear, a couple of internal fingermarks. Else book is clean and bright with unmarked text, free of inscriptions and stamps, firmly bound. Two scratches on the front board. Issued without a dust jacket. -- Contents: 1. CdTe/CdZnTe Growth [7 papers]; 2. Wide Gaps Growth [16 papers]; 3. Narrow Gaps Growth [5 papers]; 4. Doping, Defects & Diffusion [11 papers]; 5. Substrate/Layer Relationship [3 papers]; 6. Nuclear Detection [10 papers]; 7. Semimagnetics [6 papers]; 8. Solar Cells & Photorefractivity [6 papers] -- The papers collected in these Proceedings were presented at the Symposium held at the Congress Center of Strasbourg on June 16-18 1998 in the framework of the E-MRS Spring Meeting dedicated to Advanced Materials. More than 80 scientists from 14 countries attended this symposium which discussed problems dealing with the growth, characterisation and applications of bulk II-VI materials, mainly of the two key semiconductors CdTe and ZnSe. II-VI compounds cover a wide energy range from the infrared to X- and y-ray detection and can provide efficient thin film solar cells, photorefractive devices and blue/UV emission. HgCdTe continues to dominate the infrared detection/ emission field and bulk material still plays a role in this. CdTe/CdZnTe are still the preferred substrate materials for epitaxial growth of HgCdTe and are increasingly seen as viable X- and y-ray detector materials for a range of commercial applications. There is still a need to fully understand the defects in these materials, which make them suitable for photorefractive applications (e.g. in optical communications) but CdTe/CdS solar cells are closer to production in a number of locations. Although ZnSe based LEDs may be superseded by group III nitride ones, there is still an interest in ZnSe based layers for a range of applications and there has been significant progress in the growth of larger, vapour-grown ZnSe crystals with improved properties, for use in homoepitaxy. Codice articolo 007294
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