Isbn: 9780080436050 - growth, characterisation & applications of bulk ii-vis: proceedings of symposium c on growth, characterisation & applications of bulk ii-vis of the ... spring conference, strasbourg, france, june (1 risultati)

Hardcover. Condizione: Very Good. 1st Edition. Oversized hardcover, weight: 1225g, xi + pages 397-748, NOT ex-library. Gentle handling wear, a couple of internal fingermarks. Else book is clean and bright with unmarked text, free of inscriptions and stamps, firmly bound. Two scratches on the front board. Issued without a dust jacket. -- Contents: 1. CdTe/CdZnTe Growth [7 papers]; 2. Wide Gaps Growth [16 papers]; 3. Narrow Gaps Growth [5 papers]; 4. Doping, Defects & Diffusion [11 papers]; 5. Substrate/Layer Relationship [3 papers]; 6. Nuclear Detection [10 papers]; 7. Semimagnetics [6 papers]; 8. Solar Cells & Photorefractivity [6 papers] -- The papers collected in these Proceedings were presented at the Symposium held at the Congress Center of Strasbourg on June 16-18 1998 in the framework of the E-MRS Spring Meeting dedicated to Advanced Materials. More than 80 scientists from 14 countries attended this symposium which discussed problems dealing with the growth, characterisation and applications of bulk II-VI materials, mainly of the two key semiconductors CdTe and ZnSe. II-VI compounds cover a wide energy range from the infrared to X- and y-ray detection and can provide efficient thin film solar cells, photorefractive devices and blue/UV emission. HgCdTe continues to dominate the infrared detection/ emission field and bulk material still plays a role in this. CdTe/CdZnTe are still the preferred substrate materials for epitaxial growth of HgCdTe and are increasingly seen as viable X- and y-ray detector materials for a range of commercial applications. There is still a need to fully understand the defects in these materials, which make them suitable for photorefractive applications (e.g. in optical communications) but CdTe/CdS solar cells are closer to production in a number of locations. Although ZnSe based LEDs may be superseded by group III nitride ones, there is still an interest in ZnSe based layers for a range of applications and there has been significant progress in the growth of larger, vapour-grown ZnSe crystals with improved properties, for use in homoepitaxy.…