Sinossi
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
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Contenuti
Preface. 1. MOSFET Physics and Modeling. 2. MOSFET Simulation Using Device Simulator. 3. Extraction of the Threshold Voltage of MOSFETs. 4. Methods for Extracting the Effective Channel Length of MOSFETs. 5. Extraction of the Drain and Source Series Resistances of MOSFETs. 6. Parameter Extraction of Lightly-Doped Drain (LDD) MOSFETs. Appendices. A. Physical Constants and Unit Conversions. B. Properties of Germanium, Silicon, and Gallium Arsenide (at 300 K). C. Properties of SiO2 and Si3N4 (at 300 K). D. Derivation of the Integral Function and its Applications to Parameter Extraction. Subject Index. About the Authors.
Product Description
Book by Juin Jei Liou OrtizConde Adelmo GarciaSanchez Fran
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Analysis and Design of Mosfets: Modeling, Simulation, and Parameter Extraction
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Condizione: Très bon. Analysis and Design of Mosfets: Modeling, Simulation, and Parameter Extraction | Liou et alii | Kluwer Academic Publishers, 1998, in-8 cartonnage éditeur, 349 pages. Couverture propre. Dos solide. Intérieur frais. Exemplaire de bibliothèque : petit code barre en pied de 1re de couv., cotation au dos, rares et discrets petits tampons à l'intérieur de l'ouvrage. Bel état ! [BT18] Pour les expéditions internationales, nous consulter au préalable pour l ajustement des frais de port qui seront peut-être revus à la baisse/ For international shipments, please contact us in advance to adjust shipping costs. |. Codice articolo BF-PQCH-PEI5
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Analysis and Design of MOSFETs : Modeling, Simulation, and Parameter Extraction
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Condizione: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology. Codice articolo 1506339/203
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Analysis and Design of MOSFETs : Modeling, Simulation, and Parameter Extraction
Da: Buchpark, Trebbin, Germania
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Condizione: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology. Codice articolo 1506339/3
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology. 372 pp. Englisch. Codice articolo 9780412146015
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor fie. Codice articolo 5914200
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Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction (Software Engineering; 4)
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Condizione: New. Devoted to the spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). This book is extensively referenced, and contains more than 180 illustrations. Num Pages: 349 pages, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 22. Weight in Grams: 1540. . 1998. Hardback. . . . . Codice articolo V9780412146015
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