9780412146015 - analysis and design of mosfets: modeling, simulation, and parameter extraction di liou, juin j.; ortiz-conde, adelmo; garcia-sanchez, f. (17 risultati)
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Da: Buchpark, Trebbin, GermaniaBuchpark
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Condizione: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effe…ct transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
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Da: Buchpark, Trebbin, GermaniaBuchpark
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Molto buono
EUR 55,07
EUR 105,00 spedizioneSpedito da Germania a U.S.A.Quantità: 3 disponibili
Condizione: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effe…ct transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
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Da: La bataille des livres, Pradinas, FranciaLa bataille des livres
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EUR 100,00
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Condizione: Très bon. Analysis and Design of Mosfets: Modeling, Simulation, and Parameter Extraction | Liou et alii | Kluwer Academic Publishers, 1998, in-8 cartonnage éditeur, 349 pages. Couverture propre. Dos solide. Intérieur frais. Exemplaire de bibliothèque : petit code barre en pied de 1re de couv., cotation au dos, rares…et discrets petits tampons à l'intérieur de l'ouvrage. Bel état ! [BT18] Pour les expéditions internationales, nous consulter au préalable pour l ajustement des frais de port qui seront peut-être revus à la baisse/ For international shipments, please contact us in advance to adjust shipping costs. |.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction (Software Engineering; 4)
Juin Jei Liou; Ortiz-Conde, Adelmo; Garcia-Sanchez, Francisco
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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Condizione: New. In.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction (Software Engineering; 4)
Juin Jei Liou; Ortiz-Conde, Adelmo; Garcia-Sanchez, Francisco
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Da: BennettBooksLtd, Los Angeles, CA, U.S.A.BennettBooksLtd
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hardcover. Condizione: New. In shrink wrap. Looks like an interesting title.
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condizione: New. pp. 372.
Analysis and Design of MOSFETs
Liou, J.J.; Ortiz-Conde, Adelmo (Electronics Engineering Dept., University of Simon Bolivar, Caracas, Venezuela); Garcia-Sanchez, Francisco (Electron
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Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, IrlandaKennys Bookshop and Art Galleries Ltd.
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EUR 202,76
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Condizione: New. Devoted to the spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). This book is extensively referenced, and contains more than 180 illustrations. Num Pages: 349 pages, biography. BIC Classification: TJFD5. Category: (P) Pro…fessional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 22. Weight in Grams: 1540. . 1998. Hardback. . . . .
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Da: BUCHSERVICE / ANTIQUARIAT Lars Lutzer, Wahlstedt, GermaniaBUCHSERVICE / ANTIQUARIAT Lars Lutzer
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EUR 179,90
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Hardcover. Condizione: gut. 1998. Analysis and Design of MOSFETs In englischer Sprache. pages.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction (Software Engineering; 4)
Juin Jei Liou; Ortiz-Conde, Adelmo; Garcia-Sanchez, Francisco
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Da: brandnewtexts4sale, Houston, TX, U.S.A.brandnewtexts4sale
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Condizione: New. BRAND NEW. book.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 168,73
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transist…or (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Analysis and Design of MOSFETs
Liou, J.J.; Ortiz-Conde, Adelmo (Electronics Engineering Dept., University of Simon Bolivar, Caracas, Venezuela); Garcia-Sanchez, Francisco (Electron
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Da: Kennys Bookstore, Olney, MD, U.S.A.Kennys Bookstore
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EUR 253,77
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Condizione: New. Devoted to the spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). This book is extensively referenced, and contains more than 180 illustrations. Num Pages: 349 pages, biography. BIC Classification: TJFD5. Category: (P) Pro…fessional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 22. Weight in Grams: 1540. . 1998. Hardback. . . . . Books ship from the US and Ireland.
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field…-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology. 372 pp. Englisch.
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Da: moluna, Greven, Germaniamoluna
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxi…de semiconductor fie.
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Da: preigu, Osnabrück, Germaniapreigu
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Buch. Condizione: Neu. Analysis and Design of MOSFETs | Modeling, Simulation, and Parameter Extraction | Juin Jei Liou (u. a.) | Buch | xiv | Englisch | 1998 | Springer | EAN 9780412146015 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | An…bieter: preigu Print on Demand.
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-eff…ect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers.Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 372 pp. Englisch.
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Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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EUR 223,19
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Condizione: New. Print on Demand pp. 372 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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EUR 227,44
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Condizione: New. PRINT ON DEMAND pp. 372.
