Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: 47 - Brossura

Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander

Brossura

ISBN 10: 0792350081 ISBN 13: 9780792350088

Casa editrice: Springer, 2008

Riassunto

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 m and gate thicknesses of 3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main aim of this book is a review, at the nano and atomic scale, of the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories worldwide, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.

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Contenuti

Preface. Introduction. 1. Recent Advances in Experimental Studies of SiO2 Films on Si. 2. Theory of the SiO2/Si and SiOxNy/Si Systems. 3. Growth Mechanism, Processing, and Analysis of (Oxy)nitridation. 4. Initial Oxidation and Surface Science Issues. 5. Electrical Properties and Microscopic Models of Defects. 6. Hydrogen/Deuterium Issues. 7. New Substrates (SiC, SiGe) and SOI Technologies. Appendix. Authors Index. List of Workshop Participants.

Dettagli dell'edizione

• Editore: Springer
• Data di pubblicazione: 2008
• Lingua: Inglese
• ISBN 10: 0792350081
• ISBN 13: 9780792350088
• Rilegatura: Copertina flessibile
• Numero di pagine: 520
• Contatto del produttore: non disponibile
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