Articoli correlati a Coupled Diffusion of Impurity Atoms and Point Defects...

Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals - Rilegato

Velichko, Oleg

 
9781786347152: Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals

Sinossi

Velilchko proposes a theory describing the processes of atomic diffusion in a non-equilibrium state with non-uniform distributions of components in a defect-impurity system of silicon crystals. He covers the diffusion of acceptor and donor impurities in silicon: basic characteristics, a thermodynamic description of the evolution of the defect-impurity system of silicon crystals, a set of generalized equations for describing the diffusion of impurity atoms and point defects, and modeling the process of solid-state diffusion: characteristic cases of diffusion. Annotation ©2020 Ringgold, Inc., Portland, OR (protoview.com)

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