Ferroelectric Random Access Memories: Fundamentals and Applications: 93 - Rilegato

Rilegato

ISBN 10: 3540407189 ISBN 13: 9783540407188

Casa editrice: Springer Nature, 2004

Riassunto

The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.

Su questo libro

Dalla quarta di copertina

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.

Dettagli dell'edizione

• Editore: Springer Nature
• Data di pubblicazione: 2004
• Lingua: Inglese
• ISBN 10: 3540407189
• ISBN 13: 9783540407188
• Rilegatura: Copertina rigida
• Numero di pagine: 290
• Redattore: Ishiwara Hiroshi, Okuyama Masanori, Arimoto Yoshihiro
• Contatto del produttore: non disponibile
• Persona responsabile: CMN Printpool Inh. Mathis Neumann; https://www.also.com/ec/cms5/en_6000/6000/index.jsp; ; Friedrich-Karl-Str. 9; Hamburg; Germania