This book describes the principles and basic technologies of extreme ultraviolet lithography (EUVL). The topics include why research on EUVL was begun and why an exposure wavelength of 13.5 nm was selected; the design of the optical system, which employs reflective mirrors; the use of a multilayer film to make a reflective-type mask and how masks are inspected; an historical overview of the development of light sources; resist materials; and the recent performance of lithographic tools for mass production. Three innovations were key to the development: of Mo/Si multilayer films with a high reflectivity and to the shaping and metrology of aspherical mirrors with a precision of less than 0.1 nm. The technology for measuring figure error and the fabrication technology now meet the performance targets. Thus, EUVL has become the most promising lithographic technology for device fabrication at the 7-nm node.
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Hiroo Kinoshita is an expert with over 40 year’s experience in lithography. He worked for NTT and University of Hyogo, where he developed an EUVL experimental system. He has authored over 170 technical paper on EUVL. He is a fellow of The Optical Society. And he won the Joseph Fraunhofer Award/Robert M. Burley Prize from the Optical Society in 2012
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book describes the principles and basic technologies of extreme ultraviolet lithography (EUVL). The topics include why research on EUVL was begun and why an exposure wavelength of 13.5 nm was selected; the design of the optical system, which employs reflective mirrors; the use of a multilayer film to make a reflective-type mask and how masks are inspected; an historical overview of the development of light sources; resist materials; and the recent performance of lithographic tools for mass production. Three innovations were key to the development: of Mo/Si multilayer films with a high reflectivity and to the shaping and metrology of aspherical mirrors with a precision of less than 0.1 nm. The technology for measuring figure error and the fabrication technology now meet the performance targets. Thus, EUVL has become the most promising lithographic technology for device fabrication at the 7-nm node. 168 pp. Englisch. Codice articolo 9783659827402
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Da: AHA-BUCH GmbH, Einbeck, Germania
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book describes the principles and basic technologies of extreme ultraviolet lithography (EUVL). The topics include why research on EUVL was begun and why an exposure wavelength of 13.5 nm was selected; the design of the optical system, which employs reflective mirrors; the use of a multilayer film to make a reflective-type mask and how masks are inspected; an historical overview of the development of light sources; resist materials; and the recent performance of lithographic tools for mass production. Three innovations were key to the development: of Mo/Si multilayer films with a high reflectivity and to the shaping and metrology of aspherical mirrors with a precision of less than 0.1 nm. The technology for measuring figure error and the fabrication technology now meet the performance targets. Thus, EUVL has become the most promising lithographic technology for device fabrication at the 7-nm node. Codice articolo 9783659827402
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
Taschenbuch. Condizione: Neu. Neuware -This book describes the principles and basic technologies of extreme ultraviolet lithography (EUVL). The topics include why research on EUVL was begun and why an exposure wavelength of 13.5 nm was selected; the design of the optical system, which employs reflective mirrors; the use of a multilayer film to make a reflective-type mask and how masks are inspected; an historical overview of the development of light sources; resist materials; and the recent performance of lithographic tools for mass production. Three innovations were key to the development: of Mo/Si multilayer films with a high reflectivity and to the shaping and metrology of aspherical mirrors with a precision of less than 0.1 nm. The technology for measuring figure error and the fabrication technology now meet the performance targets. Thus, EUVL has become the most promising lithographic technology for device fabrication at the 7-nm node.Books on Demand GmbH, Überseering 33, 22297 Hamburg 168 pp. Englisch. Codice articolo 9783659827402
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Paperback. Condizione: Brand New. 168 pages. 8.62x5.87x0.43 inches. In Stock. Codice articolo 3659827401
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