Sinossi
Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap.
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L'autore
Joseph Muna Karanja holds B.Ed(science)in physics and maths from Egerton University,Kenya and Msc(Electronics) specializing in semiconductor electronics from Kenyatta University, Kenya. He has teaching experience in various University in Kenya notably University of Nairobi and Kenyatta University both from Kenya.
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THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM)
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LAP LAMBERT Academic Publishing Feb 2011, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap. 92 pp. Englisch. Codice articolo 9783844301472
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The Science of Phase Change Random Access Memories (Pcram)
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VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
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Condizione: New. pp. 92. Codice articolo 26128863246
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The Science of Phase Change Random Access Memories (Pcram)
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VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
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Condizione: New. Print on Demand pp. 92 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam. Codice articolo 131724241
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The Science of Phase Change Random Access Memories (Pcram)
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VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
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THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM)
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LAP LAMBERT Academic Publishing, 2011
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ISBN 13: 9783844301472
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: KARANJA JOSEPHJoseph Muna Karanja holds B.Ed(science)in physics and maths from Egerton University,Kenya and Msc(Electronics) specializing in semiconductor electronics from Kenyatta University, Kenya. He has teaching experience in . Codice articolo 5470655
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THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM)
Editore:
LAP LAMBERT Academic Publishing Feb 2011, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 92 pp. Englisch. Codice articolo 9783844301472
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THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM) : Semiconductor memory
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LAP LAMBERT Academic Publishing, 2011
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ISBN 13: 9783844301472
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Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap. Codice articolo 9783844301472
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THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM) | Semiconductor memory
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LAP LAMBERT Academic Publishing, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
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Taschenbuch. Condizione: Neu. THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM) | Semiconductor memory | Joseph Karanja | Taschenbuch | 92 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783844301472 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. Codice articolo 107085455
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