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Resistive Random Access Memory: The New Generation High Speed Switching Non-Volatile Memory Device - Brossura
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Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book.
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L'autore
Arnab Hazra received his M-Tech degree in Electronics in the specialization of VLSI Design from Bengal Engineering and Science University, Shibpur,India in 2011. He is presently a PhD scholar in the Dept. of Electronics & Tele-Comm. Engg. in the same University. His research interests include Titanium dioxide and Graphene based chemical sensors.
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Resistive Random Access Memory
Editore:
LAP LAMBERT Academic Publishing Apr 2012, 2012
ISBN 10: 3848488329
ISBN 13: 9783848488322
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book. 96 pp. Englisch. Codice articolo 9783848488322
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Resistive Random Access Memory : The New Generation High Speed Switching Non-Volatile Memory Device
Editore:
LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3848488329
ISBN 13: 9783848488322
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Da: AHA-BUCH GmbH, Einbeck, Germania
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Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book. Codice articolo 9783848488322
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Resistive Random Access Memory
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LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3848488329
ISBN 13: 9783848488322
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Da: moluna, Greven, Germania
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Hazra ArnabArnab Hazra received his M-Tech degree in Electronics in the specialization of VLSI Design from Bengal Engineering and Science University, Shibpur,India in 2011. He is presently a PhD scholar in the Dept. of Electronics & . Codice articolo 5526468
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Resistive Random Access Memory
Editore:
LAP LAMBERT Academic Publishing Apr 2012, 2012
ISBN 10: 3848488329
ISBN 13: 9783848488322
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 96 pp. Englisch. Codice articolo 9783848488322
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Resistive Random Access Memory | The New Generation High Speed Switching Non-Volatile Memory Device
Editore:
LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3848488329
ISBN 13: 9783848488322
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Da: preigu, Osnabrück, Germania
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Taschenbuch. Condizione: Neu. Resistive Random Access Memory | The New Generation High Speed Switching Non-Volatile Memory Device | Arnab Hazra | Taschenbuch | 96 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783848488322 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Codice articolo 106497232
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