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The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.
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Introduction to Junctionless Double Gate MOSFET
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LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487
ISBN 13: 9786139462483
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Dhiman GauravGaurav Dhiman was born in Pathankot, India, in1981. He received the B.Tech. degree in Electronics and Communicationengineering from the Punjab Technical University, Jalandhar, India, in 2003,and the M.Tech. and Ph.D. deg. Codice articolo 285393545
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Introduction to Junctionless Double Gate MOSFET
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LAP LAMBERT Academic Publishing Mrz 2019, 2019
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc. 60 pp. Englisch. Codice articolo 9786139462483
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Introduction to Junctionless Double Gate MOSFET
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ISBN 10: 6139462487
ISBN 13: 9786139462483
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Taschenbuch. Condizione: Neu. Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.Books on Demand GmbH, Überseering 33, 22297 Hamburg 60 pp. Englisch. Codice articolo 9786139462483
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Introduction to Junctionless Double Gate MOSFET
Editore:
LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487
ISBN 13: 9786139462483
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Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc. Codice articolo 9786139462483
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Introduction to Junctionless Double Gate MOSFET
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ISBN 10: 6139462487
ISBN 13: 9786139462483
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Introduction to Junctionless Double Gate MOSFET
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ISBN 13: 9786139462483
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Introduction to Junctionless Double Gate MOSFET
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ISBN 13: 9786139462483
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Introduction to Junctionless Double Gate MOSFET
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ISBN 13: 9786139462483
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Paperback. Condizione: Brand New. 60 pages. 8.66x5.91x0.14 inches. In Stock. Codice articolo zk6139462487
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