9786139462483 - introduction to junctionless double gate mosfet di dhiman, gaurav; pourush, rajeev (9 risultati)
- Brossura
Da: Books Puddle, New York, NY, U.S.A.Books Puddle
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 63,17
EUR 3,43 spedizioneSpedito in U.S.A.Quantità: 4 disponibili
Condizione: New.
- Brossura
Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 72,23
EUR 11,65 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Paperback. Condizione: Brand New. 60 pages. 8.66x5.91x0.14 inches. In Stock.
- Brossura
Da: preigu, Osnabrück, Germaniapreigu
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 36,35
EUR 70,00 spedizioneSpedito da Germania a U.S.A.Quantità: 5 disponibili
Taschenbuch. Condizione: Neu. Introduction to Junctionless Double Gate MOSFET | Gaurav Dhiman (u. a.) | Taschenbuch | 60 S. | Englisch | 2019 | LAP LAMBERT Academic Publishing | EAN 9786139462483 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter:… preigu.
- Brossura
- Print on Demand
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 39,90
EUR 23,00 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent ne…cessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc. 60 pp. Englisch.
- Brossura
- Print on Demand
Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 62,33
EUR 7,57 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 4 disponibili
Condizione: New. Print on Demand.
- Brossura
- Print on Demand
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 42,25
EUR 30,50 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessi…ty for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.
- Brossura
- Print on Demand
Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 64,66
EUR 9,95 spedizioneSpedito da Germania a U.S.A.Quantità: 4 disponibili
Condizione: New. PRINT ON DEMAND.
- Brossura
- Print on Demand
Da: moluna, Greven, Germaniamoluna
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 34,25
EUR 48,99 spedizioneSpedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Dhiman GauravGaurav Dhiman was born in Pathankot, India, in1981. He received the B.Tech. degree in Electronics and Communicationengineering from the Punjab Technical University, Jalandhar, India, in 20…03,and the M.Tech. and Ph.D. deg.
- Brossura
- Print on Demand
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 39,90
EUR 60,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necess…ity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 60 pp. Englisch.
