Sinossi
The performance comparison between conventional Bipolar Junction Transistor (BJT) and developed Heterojunction Emitter Bipolar Transistors (HEBT) structure has been completed based on operating frequency, carrier mobility rate and band diagram alignment of which were the critical considered parameters of the evaluation of performance of the semiconductor electronics devices. The results from the analyzes confirm that the developed Emitter Heterojunction Bipolar Transistors (HEBT) structure was met the high performance application in reality. The implementations were accomplished based on physical parameters and the numerical analyzes were completed by MATLAB language.
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Analysis of III-V Compound-based Quantum Well Transistor
Editore:
LAP LAMBERT Academic Publishing Sep 2020, 2020
ISBN 10: 6202800216
ISBN 13: 9786202800211
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The performance comparison between conventional Bipolar Junction Transistor (BJT) and developed Heterojunction Emitter Bipolar Transistors (HEBT) structure has been completed based on operating frequency, carrier mobility rate and band diagram alignment of which were the critical considered parameters of the evaluation of performance of the semiconductor electronics devices. The results from the analyzes confirm that the developed Emitter Heterojunction Bipolar Transistors (HEBT) structure was met the high performance application in reality. The implementations were accomplished based on physical parameters and the numerical analyzes were completed by MATLAB language. 96 pp. Englisch. Codice articolo 9786202800211
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Analysis of III-V Compound-based Quantum Well Transistor
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LAP LAMBERT Academic Publishing, 2020
ISBN 10: 6202800216
ISBN 13: 9786202800211
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Tin Swe Hsu MyatHsu Myat Tin Swe received her Bachelor of Engineering Degree in Electronics from Technological University (Taunggyi) in 2015. She got her Master of Engineering (Electronics) degree from Yangon Technological University. Codice articolo 399518285
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Analysis of III-V Compound-based Quantum Well Transistor
Editore:
LAP LAMBERT Academic Publishing Sep 2020, 2020
ISBN 10: 6202800216
ISBN 13: 9786202800211
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
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Taschenbuch. Condizione: Neu. Neuware -The performance comparison between conventional Bipolar Junction Transistor (BJT) and developed Heterojunction Emitter Bipolar Transistors (HEBT) structure has been completed based on operating frequency, carrier mobility rate and band diagram alignment of which were the critical considered parameters of the evaluation of performance of the semiconductor electronics devices. The results from the analyzes confirm that the developed Emitter Heterojunction Bipolar Transistors (HEBT) structure was met the high performance application in reality. The implementations were accomplished based on physical parameters and the numerical analyzes were completed by MATLAB language.Books on Demand GmbH, Überseering 33, 22297 Hamburg 96 pp. Englisch. Codice articolo 9786202800211
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Analysis of III-V Compound-based Quantum Well Transistor
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LAP LAMBERT Academic Publishing, 2020
ISBN 10: 6202800216
ISBN 13: 9786202800211
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Da: AHA-BUCH GmbH, Einbeck, Germania
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Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The performance comparison between conventional Bipolar Junction Transistor (BJT) and developed Heterojunction Emitter Bipolar Transistors (HEBT) structure has been completed based on operating frequency, carrier mobility rate and band diagram alignment of which were the critical considered parameters of the evaluation of performance of the semiconductor electronics devices. The results from the analyzes confirm that the developed Emitter Heterojunction Bipolar Transistors (HEBT) structure was met the high performance application in reality. The implementations were accomplished based on physical parameters and the numerical analyzes were completed by MATLAB language. Codice articolo 9786202800211
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Analysis of III-V Compound-based Quantum Well Transistor
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LAP LAMBERT Academic Publishing, 2020
ISBN 10: 6202800216
ISBN 13: 9786202800211
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Da: preigu, Osnabrück, Germania
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Taschenbuch. Condizione: Neu. Analysis of III-V Compound-based Quantum Well Transistor | Hsu Myat Tin Swe | Taschenbuch | Englisch | 2020 | LAP LAMBERT Academic Publishing | EAN 9786202800211 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Codice articolo 118948884
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