Transistor Level Modeling for Analog/RF IC Design - Brossura

 
9789048171484: Transistor Level Modeling for Analog/RF IC Design

Sinossi

This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.

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Informazioni sull?autore

Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.

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Altre edizioni note dello stesso titolo

9781402045554: Transistor Level Modeling for Analog/ RF IC Design

Edizione in evidenza

ISBN 10:  1402045557 ISBN 13:  9781402045554
Casa editrice: Springer Verlag, 2006
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