9789048171484 - transistor level modeling for analog/rf ic design (12 risultati)
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Condizione: New. pp. xii + 293 1st Edition.
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Paperback. Condizione: Brand New. 306 pages. 9.00x6.00x0.73 inches. In Stock.
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Taschenbuch. Condizione: Neu. Transistor Level Modeling for Analog/RF IC Design | Wladyslaw Grabinski (u. a.) | Taschenbuch | xiv | Englisch | 2010 | Springer | EAN 9789048171484 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: pr…eigu.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Among many great inventions made in the 20th century, electronic circuits, which later evolved into integrated circuits, are probably the biggest, when considering their contribution to human society. Entering the 21st century, the importance of i…ntegrated circuits has increased even more. In fact, without the help of integrated circuits, recent high-technology society with the internet, cellular phone, car navigation, digital camera, and robot would never have been realized. Nowadays, integrated circuits are indispensable for almost every activity of our society. One of the critical issues for the fabrication of integrated circuits has been the precise design of the high-speed or high-frequency operation of circuits with huge number of components. It is quite natural to predict the circuit operation by computer calculation, and there have been three waves for this, at 15-year intervals. The rst wave came at the beginning of the 1970s when LSIs (Large Scale Integrated circuits) with more than 1000 components had just been int- duced into the market. A mainframe computer was used for the simulation, and each semiconductor company used its own proprietary simulators and device models. However, the capability of the computer and accuracy of the model were far from satisfactory, and there are many cases of the necessity of circuit re-design after evaluation of the rst chip. The second wave hit us in the middle of 1980s, when the EWS (Engine- ing Work Station) was introduced for use by designers.
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document…for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas. 308 pp. Englisch.
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Da: moluna, Greven, Germaniamoluna
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Brings together a variety of modeling techniquesTreats models as well as methods of implementationIs a true in depth source for MOS-modelersDr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling… workshop at th.
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Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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Condizione: New. Print on Demand pp. xii + 293.
Transistor Level Modeling for Analog/RF IC Design
Schreurs Dominique Nauwelaers Bart Grabinski Wladyslaw Grabinski Wladyslaw
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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Condizione: New. PRINT ON DEMAND pp. xii + 293.
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both…PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 308 pp. Englisch.
