Defects in Silicon: Proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-Mrs Conference, Strasbourg, France, 30: . Society Symposia Proceedings, Band 9)

Symposium B on Science and Technology of Defects in Silicon

ISBN 10: 0444886192 / ISBN 13: 9780444886194

Editore: North-Holland, 1989

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Gut/Very good: Buch bzw. Schutzumschlag mit wenigen Gebrauchsspuren an Einband, Schutzumschlag oder Seiten. / Describes a book or dust jacket that does show some signs of wear on either the binding, dust jacket or pages. Codice articolo M00444886192-V

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Titolo: Defects in Silicon: Proceedings of Symposium...

Casa editrice: North-Holland

Data di pubblicazione: 1989

Legatura: Rilegato

Condizione: very good

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Riassunto:

This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.