Electronic properties of semiconductor interfaces : with 17 tables. (=Springer series in surface sciences ; 43).

Mönch, Winfried:

ISBN 10: 3540202153 / ISBN 13: 9783540202158

Editore: Berlin, Springer, 2004

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XI, 263 S.; Ill. Like new. Shrink wrapped. Sprache: Englisch Gewicht in Gramm: 780.

Codice articolo 812540

Dati bibliografici

• Titolo: Electronic properties of semiconductor interfaces : with 17 tables. (=Springer series in surface sciences ; 43).
• Editore: Berlin, Springer
• Data di pubblicazione: 2004
• Lingua: Inglese
• ISBN 10: 3540202153
• ISBN 13: 9783540202158
• Rilegatura: Hardcover
• Condizione: Wie neu
• Peso: 780 grammi
• Cataloghi dei venditori:
  • Physik

Descrizione articolo

Riassunto

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Dalla quarta di copertina

Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.