Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

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Dati bibliografici

Titolo

Modeling and Characterization of RF and Microwave Power FETs (Paperback)

Editore

Cambridge University Press, Cambridge

Data di pubblicazione

2011

Lingua

Inglese

ISBN 10

0521336171

ISBN 13

9780521336178

Rilegatura

Paperback

Condizione

new

Cataloghi dei venditori

Descrizione articolo

Riassunto

This book was the first to be devoted to the compact modeling of RF power FETs.

Recensione

Review of the hardback: '... a well-written and useful text ... a coherent review of the advanced state of power FET modelling and characterisation.' IEEE Microwave Magazine

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