Transport in Metal-Oxide-Semiconductor Structures

Hamid Bentarzi

ISBN 10: 3642163033 / ISBN 13: 9783642163036

Editore: Springer Berlin Heidelberg, Springer Berlin Heidelberg Jan 2011, 2011

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Neuware -This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 120 pp. Englisch.

Codice articolo 9783642163036

Dati bibliografici

• Titolo: Transport in Metal-Oxide-Semiconductor Structures
• Editore: Springer Berlin Heidelberg, Springer Berlin Heidelberg Jan 2011
• Data di pubblicazione: 2011
• Lingua: Inglese
• ISBN 10: 3642163033
• ISBN 13: 9783642163036
• Rilegatura: Buch
• Condizione: Neu

Descrizione articolo

Riassunto

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.