Editore: Berlin/Heidelberg, Springer., 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Lingua: Inglese
Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, Germania
EUR 12,00
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Aggiungi al carrello24 cm. xviii, 126 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.
Editore: Artech House November 2017, 2017
ISBN 10: 1630813400 ISBN 13: 9781630813406
Lingua: Inglese
Da: Caspian Books, Tracy, CA, U.S.A.
EUR 44,29
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Aggiungi al carrelloHardcover. Condizione: Like New. Publisher's stamp on verso of front cover. Otherwise bright and clean with an unmarked interior and tight binding. No visible signs of wear. In as new condition.
EUR 53,60
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Da: Lucky's Textbooks, Dallas, TX, U.S.A.
EUR 52,40
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EUR 53,94
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Da: Lucky's Textbooks, Dallas, TX, U.S.A.
EUR 52,75
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Da: California Books, Miami, FL, U.S.A.
EUR 60,24
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EUR 59,68
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EUR 61,40
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Da: California Books, Miami, FL, U.S.A.
EUR 65,55
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Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 56,45
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Da: Books Puddle, New York, NY, U.S.A.
EUR 69,92
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Aggiungi al carrelloCondizione: New. pp. 120.
Da: Books Puddle, New York, NY, U.S.A.
EUR 69,92
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Aggiungi al carrelloCondizione: New. pp. 126.
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 59,91
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EUR 56,43
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EUR 59,90
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EUR 64,87
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EUR 65,72
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EUR 77,99
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Aggiungi al carrelloHardcover. Condizione: Brand New. 146 pages. 9.50x6.25x0.75 inches. In Stock.
Editore: Springer Berlin Heidelberg, Springer Berlin Heidelberg Feb 2016, 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Lingua: Inglese
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 53,49
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Aggiungi al carrelloBuch. Condizione: Neu. Neuware -A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 144 pp. Englisch.
Editore: Springer Berlin Heidelberg, 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Lingua: Inglese
Da: Buchpark, Trebbin, Germania
EUR 10,81
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Aggiungi al carrelloCondizione: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.
Editore: Springer Berlin Heidelberg, 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Lingua: Inglese
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 53,49
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Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.
EUR 49,55
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Field-effect Self-mixing Terahertz Detectors | Jiandong Sun | Taschenbuch | Previously published in hardcover | xviii | Englisch | 2018 | Springer | EAN 9783662569481 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Editore: Springer, Berlin, Springer Berlin Heidelberg, Springer, 2018
ISBN 10: 3662569485 ISBN 13: 9783662569481
Lingua: Inglese
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 57,68
Convertire valutaQuantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.
Da: Buchpark, Trebbin, Germania
EUR 41,06
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Aggiungi al carrelloCondizione: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher.
Da: Majestic Books, Hounslow, Regno Unito
EUR 71,64
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Aggiungi al carrelloCondizione: New. Print on Demand pp. 126.
Editore: Berlin Springer Berlin Heidelberg Springer Mrz 2018, 2018
ISBN 10: 3662569485 ISBN 13: 9783662569481
Lingua: Inglese
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 53,49
Convertire valutaQuantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques and device simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications. 126 pp. Englisch.
Editore: Springer Berlin Heidelberg Feb 2016, 2016
ISBN 10: 3662486792 ISBN 13: 9783662486795
Lingua: Inglese
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 53,49
Convertire valutaQuantità: 2 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques and device simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications. 144 pp. Englisch.
Da: Majestic Books, Hounslow, Regno Unito
EUR 71,97
Convertire valutaQuantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand pp. 120.
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 73,50
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Aggiungi al carrelloCondizione: New. PRINT ON DEMAND pp. 126.