Athanasios dimoulas (47 risultati)

Paperback. Condizione: New. Brand new book, sourced directly from publisher. Dispatch time is 7-8 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

Condizione: New.

Condizione: As New. Unread book in perfect condition.

Condizione: New.

Condizione: New.

Paperback / softback. Condizione: New. New copy - Usually dispatched within 4 working days.

Condizione: As New. Unread book in perfect condition.

Condizione: New. 1st edition NO-PA16APR2015-KAP.

Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Paperback. Condizione: Brand New. 483 pages. 9.25x6.14x1.22 inches. In Stock.

Condizione: New.

Taschenbuch. Condizione: Neu. Neuware.

Condizione: New. In English.

Condizione: New. In English.

Taschenbuch. Condizione: Neu. Advanced Gate Stacks for High-Mobility Semiconductors | Athanasios Dimoulas (u. a.) | Taschenbuch | Springer Series in Advanced Microelectronics | xxii | Englisch | 2010 | Springer | EAN 9783642090714 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

hardcover. Condizione: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology. …

Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Strained-Si CMOS Technology.- High Current Drivability MOSFET Fabricated on Si(110) Surface.- Advanced High-Mobility Semiconductor-on-Insulator Materials.- Passivation and Characterization of Germanium Surfaces.- Interface Engineering for High- Ge MOSFETs.- Effect of Surface Nitridation on the Electrical Characteristics of Germanium High- /Metal Gate Metal-Oxide-Semiconductor Devices.- Modeling of Growth of High- Oxides on Semiconductors.- Physical, Chemical, and Electrical Characterization of High- Dielectrics on Ge and GaAs.- Point Defects in Stacks of High- Metal Oxides on Ge: Contrast with the Si Case.- High Gate Dielectrics for Compound Semiconductors.- Interface Properties of High- Dielectrics on Germanium.- A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High- Materials and Films.- Germanium Nanodevices and Technology.- Opportunities and Challenges of Germanium Channel MOSFETs.- Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates.- Processing and Characterization of III-V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics.- Fabrication of MBE High- MOSFETs in a Standard CMOS Flow.…

Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 408 | Sprache: Englisch | Produktart: Bücher | This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology. …

Condizione: New. pp. 408.

Hardcover. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Hardcover. Condizione: New. Brand new book, sourced directly from publisher. Dispatch time is 7-8 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

Condizione: New.

Condizione: New.

Paperback. Condizione: Brand New. 383 pages. 9.00x6.00x0.92 inches. In Stock.

Condizione: As New. Unread book in perfect condition.

Condizione: New. pp. 484.

Condizione: New. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 6-10 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.…

Condizione: New. pp. 484.