Byung eun park (39 risultati)
Lingua: Inglese
Editore: Dordrecht, Springer. 2016
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, , GermaniaUniversitätsbuchhandlung Herta Hold GmbH
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EUR 22,00
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XVIII, 347 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.
Lingua: Inglese
Editore: Singapore, Springer. 2020
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, , GermaniaUniversitätsbuchhandlung Herta Hold GmbH
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EUR 22,00
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2nd ed. 2020. XIV, 425 p. Hardcover. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Topics in Applied Physics, 131. Sprache: Englisch.
Ferroelectric-Gate Field Effect Transistor Memories. Device Physics and Applications.
Park, Byung-Eun/Ishiwara, Hiroshi/Okuyama, Masanori/Sakai, Shigeki/Yoon, Sung-Min (Hrsg.)
Lingua: Inglese
Editore: Singapore, Springer Singapore. 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, , GermaniaUniversitätsbuchhandlung Herta Hold GmbH
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EUR 24,00
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2nd ed. 2020. 16 x 24 cm. XIV, 425 S. XIV, 425 p. 313 illus., 183 illus. in color. Softcover (Topics in Applied Physics). Sprache: Englisch.
Lingua: Inglese
Editore: Springer 2016
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: Phatpocket Limited, Waltham Abbey, HERTS, Regno UnitoPhatpocket Limited
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EUR 43,01
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Condizione: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.
Lingua: Inglese
Editore: Springer 2016
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: Antiquariat Bookfarm, Löbnitz, GermaniaAntiquariat Bookfarm
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EUR 21,90
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Hardcover. 347 S. Ex-library with stamp and library-signature in good condition, some traces of use. C-00991 9789402408393 Sprache: Englisch Gewicht in Gramm: 550.
Lingua: Inglese
Editore: SPRINGER NATURE 2016
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: Buchpark, Trebbin, , GermaniaBuchpark
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EUR 19,59
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Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 347 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
Lingua: Inglese
Editore: Springer 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 159,27
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Condizione: New. pp. 365.
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condizione: New.
Lingua: Inglese
Editore: Springer 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: Majestic Books, Hounslow, , Regno UnitoMajestic Books
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EUR 166,78
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Condizione: New. pp. 365.
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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EUR 164,47
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Condizione: New. In.
Lingua: Inglese
Editore: Springer 2020
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 176,26
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Condizione: New.
Lingua: Inglese
Editore: Springer 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: preigu, Osnabrück, Germaniapreigu
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EUR 108,65
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Taschenbuch. Condizione: Neu. Ferroelectric-Gate Field Effect Transistor Memories | Device Physics and Applications | Byung-Eun Park (u. a.) | Taschenbuch | xviii | Englisch | 2018 | Springer | EAN 9789402414165 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[a…t]springer[dot]com | Anbieter: preigu.
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
- Brossura
Da: Majestic Books, Hounslow, , Regno UnitoMajestic Books
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EUR 178,60
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Condizione: New.
Lingua: Inglese
Editore: Springer 2020
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
- Rilegato
Da: Majestic Books, Hounslow, , Regno UnitoMajestic Books
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EUR 182,65
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Condizione: New.
Lingua: Inglese
Editore: Springer Netherlands, Springer Netherlands 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 127,42
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric… memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Lingua: Inglese
Editore: Springer 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: Revaluation Books, Exeter, , Regno UnitoRevaluation Books
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EUR 194,91
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Paperback. Condizione: Brand New. reprint edition. 347 pages. 9.25x6.10x0.83 inches. In Stock.
Altre immaginiLingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
- Brossura
Da: preigu, Osnabrück, Germaniapreigu
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EUR 140,00
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Taschenbuch. Condizione: Neu. Ferroelectric-Gate Field Effect Transistor Memories | Device Physics and Applications | Byung-Eun Park (u. a.) | Taschenbuch | Topics in Applied Physics | xiv | Englisch | 2021 | Springer | EAN 9789811512148 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelbe…rg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Lingua: Inglese
Editore: Springer Nature Singapore, Springer Nature Singapore 2020
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
- Rilegato
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 145,15
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory… has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Lingua: Inglese
Editore: Springer 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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EUR 198,07
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paperback. Condizione: New. New. book.
Lingua: Inglese
Editore: Springer, Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
- Brossura
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 168,73
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric… memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Lingua: Inglese
Editore: Springer Nature 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Revaluation Books, Exeter, , Regno UnitoRevaluation Books
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Paperback. Condizione: Brand New. 2nd edition. 439 pages. 9.25x6.10x1.06 inches. In Stock.
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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Paperback. Condizione: New. New. book.
Lingua: Inglese
Editore: Springer 2020
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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Hardcover. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Lingua: Inglese
Editore: Springer 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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- Print on Demand
Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Condizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer 2021
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
- Brossura
- Print on Demand
Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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EUR 126,26
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Condizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer 2020
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
- Rilegato
- Print on Demand
Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Condizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer Netherlands Jun 2018 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
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- Print on Demand
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, , GermaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 123,04
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-ty…pe ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. 368 pp. Englisch.
Ferroelectric-Gate Field Effect Transistor Memories
Park, Byung-Eun|Ishiwara, Hiroshi|Okuyama, Masanori|Sakai, Shigeki|Yoon, Sung-Min
Lingua: Inglese
Editore: Springer Netherlands 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
- Brossura
- Print on Demand
Da: moluna, Greven, , Germaniamoluna
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EUR 105,45
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Describes the development history, materials, fabrication methodologies, technical challenges and promising applications of FET-type ferroelectric memory devicesPresents a comprehensive review of past, present, and f…uture technologies for the FET-.
Lingua: Inglese
Editore: Springer Nature Singapore Mrz 2020 2020
Serie: Topics in Applied Physics, Libro 30 di 37. Libro 30 di 37 - Topics in Applied Physics
- Rilegato
- Print on Demand
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, , GermaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 139,09
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferr…oelectric memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. 440 pp. Englisch.
Lingua: Inglese
Editore: Springer, Springer Jun 2018 2018
Serie: Topics in Applied Physics, Libro 26 di 37. Libro 26 di 37 - Topics in Applied Physics
- Brossura
- Print on Demand
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 123,04
EUR 60,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type f…erroelectric memory has interesting fundamental device physics and potentially large industrial impact.Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 368 pp. Englisch.
