Chandra sekhar musalikunta (6 risultati)

Taschenbuch. Condizione: Neu. Investigations on Magnetron Sputtered Titanium based Oxide Films | For Microelectronic Devices | Chandra Sekhar Musalikunta (u. a.) | Taschenbuch | 180 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659874819 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.…

paperback. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant. 180 pp. Englisch.…

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Musalikunta Chandra SekharHe received the B.Sc. degree with First Class from Sri Venkateswara University, Tirupati, India in 2001 and the M.S. and Ph.D. degrees from the Sri Venkateswara University, Tirupati, in 2005 and 2012, respec.…

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 180 pp. Englisch.…

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.…