Chatterjee sulagna (8 risultati)
- Brossura
Da: California Books, Miami, FL, U.S.A.California Books
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 77,52
Spedizione gratuitaSpedito in U.S.A.Quantità: Più di 20 disponibili
Condizione: New.
- Brossura
Da: PBShop.store UK, Fairford, GLOS, Regno UnitoPBShop.store UK
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 81,28
EUR 3,87 spedizioneSpedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.
- Brossura
Da: preigu, Osnabrück, Germaniapreigu
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 58,70
EUR 70,00 spedizioneSpedito da Germania a U.S.A.Quantità: 5 disponibili
Taschenbuch. Condizione: Neu. Nanoscale Strain-engineering in Solid State Semiconductor Devices | From Fundamentals to Applications | Sulagna Chatterjee | Taschenbuch | Englisch | 2026 | LAP LAMBERT Academic Publishing | EAN 9786209522390 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039…RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.
- Brossura
- Print on Demand
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.Grand Eagle Retail
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 77,51
Spedizione gratuitaSpedito in U.S.A.Quantità: 1 disponibili
Paperback. Condizione: new. Paperback. An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted f…or. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
- Brossura
- Print on Demand
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 68,90
EUR 23,00 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 136 pp. Englisch.
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- Print on Demand
Da: CitiRetail, Stevenage, Regno UnitoCitiRetail
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 87,24
EUR 43,53 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Paperback. Condizione: new. Paperback. An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted f…or. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
- Brossura
- Print on Demand
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 68,90
EUR 60,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both pr…ocess- and substrate-induced stress has been accounted for. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 136 pp. Englisch.
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- Print on Demand
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 69,73
EUR 61,11 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering.
