Claeys cor (63 risultati)

Cloth. Condizione: Fine. No Jacket. First Edition. Previous owner's name, otherwise, a fine, unmarked hardcover copy in blue cloth binding with silver lettering.

Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Condizione: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.

Condizione: New.

Condizione: As New. Unread book in perfect condition.

Condizione: New.

hardcover. Condizione: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority.

Hardcover. Condizione: Very Good. 1st Edition. Very good, clean, tight condition. Text free of marks. Some spotting on cover. Professional book dealer since 1999. All orders are processed promptly and carefully packaged with tracking.

Condizione: As New. Unread book in perfect condition.

HRD. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

Hardback. Condizione: New.

Hardcover. Condizione: New.

Gebunden. Condizione: New.

Condizione: New. pp. xxiv + 449 Illus.

Condizione: New. In.

Hardcover. Condizione: Brand New. 1st edition. 480 pages. 9.75x6.75x1.25 inches. In Stock.

Condizione: New. In.

Condizione: New. In.

Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 324 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Condizione: New.

Condizione: New.

Condizione: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | As semiconductor devices move to the nanoscale, random telegraph signals have become an issue of major concern to the semiconductor industry. This book aims to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of random telegraph signals to applied technology.…

Condizione: As New. Unread book in perfect condition.

Condizione: New. pp. xxiv + 449.

Condizione: New.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control. …

Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control. …

Condizione: New. pp. xx + 297 1st Edition.