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hardcover. Condizione: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority!
Da: Revaluation Books, Exeter, Regno Unito
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Aggiungi al carrelloPaperback. Condizione: Brand New. 483 pages. 9.25x6.14x1.22 inches. In Stock.
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Da: moluna, Greven, Germania
EUR 68,02
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Lingua: Inglese
Editore: Taylor & Francis Ltd Mär 2021, 2021
ISBN 10: 0367783037 ISBN 13: 9780367783037
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 84,17
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Condizione: New. pp. 408.
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Advanced Gate Stacks for High-Mobility Semiconductors | Athanasios Dimoulas (u. a.) | Taschenbuch | Springer Series in Advanced Microelectronics | xxii | Englisch | 2010 | Springer | EAN 9783642090714 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, 2010
ISBN 10: 3642090710 ISBN 13: 9783642090714
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 160,49
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
EUR 119,30
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Aggiungi al carrelloCondizione: Sehr gut. Zustand: Sehr gut | Seiten: 408 | Sprache: Englisch | Produktart: Bücher | This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, Springer Berlin Heidelberg, 2007
ISBN 10: 3540714901 ISBN 13: 9783540714903
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 160,49
Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 212,08
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Aggiungi al carrelloHardcover. Condizione: Like New. Like New. book.
Lingua: Inglese
Editore: Springer Berlin Heidelberg, 2007
ISBN 10: 3642090710 ISBN 13: 9783642090714
Da: Revaluation Books, Exeter, Regno Unito
EUR 234,53
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Aggiungi al carrelloPaperback. Condizione: Brand New. 383 pages. 9.00x6.00x0.92 inches. In Stock.
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Da: Majestic Books, Hounslow, Regno Unito
EUR 260,20
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Aggiungi al carrelloCondizione: New. pp. 484.
Da: UK BOOKS STORE, London, LONDO, Regno Unito
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Aggiungi al carrelloCondizione: New. Brand New ! Fast Delivery "International Edition " and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 4-6 Working days .and we do have flat rate for up to 2LB. Extra shipping charges will be requested This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 259,74
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Aggiungi al carrelloPaperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Condizione: New. pp. 484.
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 272,14
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Da: moluna, Greven, Germania
EUR 239,03
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Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 298,11
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Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 296,71
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Aggiungi al carrelloBuch. Condizione: Neu. Neuware.