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The Canterbury Tales
Lingua: Inglese
Editore: Barnes & Noble Classics/Published by Barnes & Noble Books/Barnes & Noble, Inc., New York, 2006
ISBN 10: 1593083122 ISBN 13: 9781593083120
Mass Market Paperback. Condizione: Good. Dutton & Sherman (Cover Design); Walter Appleton Clark (Cover Art) (illustratore). 536 pp. Solidly bound copy with moderate use. Front cover torn along bottom edge. Slightly slanted spine.
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EUR 18,10
Spedizione gratuita
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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Geology and Geohydrology of the Palo Duro Basin, Texas Panhandle : A Report on the Progress of Nuclear Waste Isolation Feasibility Studies (1978). (Bureau of Economic Geology, The University of Texas At Austin Geological Circular 79-1).
Editore: Bureau of Economic Geology., 1979
Da: Eryops Books, Stephenville, TX, U.S.A.
Valutazione del venditore 5 su 5 stelle
Soft cover. Condizione: Very Good. ORIGINAL 1979 PUBLICATION; softcover; ex-corporate library; light creasing of corners of covers and a few leaves; o/w in very good condition. Book.
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Geology and Geohydrology of the Palo Duro Basin, Texas Panhandle : A Report on the Progress of Nuclear Waste Isolation Feasibility Studies (1978). (Bureau of Economic Geology, The University of Texas At Austin Geological Circular 79-1).
Editore: Bureau of Economic Geology., 1979
Da: Eryops Books, Stephenville, TX, U.S.A.
Valutazione del venditore 5 su 5 stelle
Soft cover. Condizione: Very Good. ORIGINAL 1979 PUBLICATION; softcover; owner's blind stamps; o/w in very good condition. Book.
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Science, Technology, Human Values ; Volume 12 Issue 3 & 4 1987 No. 60 & 61 (Double Issue)
Editore: John Wiley & Sons, New York, 1987
Da: Evolving Lens Bookseller, Kingston, NY, U.S.A.
Membro dell'associazione: IOBA
Valutazione del venditore 4 su 5 stelle
Prima edizione
Softcover. First Edition, First Printing. Book condition is Very Good, bound in wraps. Some rubbing and edgewear to exterior. Text is clean and unmarked. ; 4to. 11"h x 8 1/2"w. Contents: The Technical and Ethical Aspects of Risk Communication : Frederick W. Allen, Leslie I. Boden, Phil Brown, Rosemary A. Chalk, Richard Davies, Thomas Dietz, Diana B. Dutton, Timothy Edgar, June Fessenden-Raden, Baruch Fischhoff, Janet M. Fitchen, John C. Fletcher, Vicki S. Freimuth, Sharon L. Hammond, Alice J. Hausman, Jenifer S. Heath, Stephen Hilgartner, Sheila Jasanoff, Richard P. Keeling, Sheldon Krimsky, Allan Mazur, David Ozonoff, Carolyn Needleman, Dorothy Nelkin, Alonzo Plough, Deborah Prothrow-Stith, James L. Regens, Judy B. Rosener, Sallie C. Russell, Robert W. Rycroft, Howard Spivak, Dorothy C. Wertz, Rae Zimmerman.
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Process and Device Simulation for MOS-VLSI Circuits (NATO Science Series E:)
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 61,36
Spedizione EUR 14,05
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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Process and Device Simulation for MOS-VLSI Circuits (Nato Science Series E:)
Da: Chiron Media, Wallingford, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 58,04
Spedizione EUR 18,17
Spedito da Regno Unito a U.S.A.Quantità: 10 disponibili
Aggiungi al carrelloPaperback. Condizione: New.
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Process and Device Simulation for MOS-VLSI Circuits (NATO Science Series E:, 62)
Da: Solr Books, Lincolnwood, IL, U.S.A.
Valutazione del venditore 5 su 5 stelle
Condizione: good. This book is in Good condition. There may be some notes and highligting but otherwise the book is in overall good condition.
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Process and Device Simulation for MOS-VLSI Circuits
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 638.
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Process and Device Simulation for M.O.S.-V.L.S.I. Circuits
Lingua: Inglese
Editore: Martinus Nijhoff Publishers, 2013
ISBN 10: 9400968442 ISBN 13: 9789400968448
Da: Revaluation Books, Exeter, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 85,41
Spedizione EUR 14,66
Spedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 636 pages. 9.25x6.10x1.44 inches. In Stock.
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Australian Poetry 1964 - First Edition
Editore: Sydney: Angus and Robertson, 1964
Da: Benedict Wilson Books, Folkestone, KENT, Regno Unito
Valutazione del venditore 5 su 5 stelle
Prima edizione
EUR 36,24
Spedizione EUR 23,45
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Near Fine. Dust Jacket Included. 1st Edition. FIRST EDITION, first printing. Octavo (20 x 14cm), pp.x; 94. Publisher's green cloth titles in gilt to spine. Dust-jacket with printed price of 15s. to front flap. A little dustiness to edges, dust-jacket lightly handled, toned to spine. Near fine.
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Process and Device Simulation for MOS-VLSI Circuits
Lingua: Inglese
Editore: Springer Netherlands, Springer Netherlands, 2011
ISBN 10: 9400968442 ISBN 13: 9789400968448
EUR 59,97
Spedizione EUR 64,75
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.
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EDA for IC Implementation, Circuit Design, and Process Technology (Electronic Design Automation for Integrated Circuits Hdbk)
Libro 1 di 2: Electronic Design Automation for Integrated Circuits HdbkDa: Swan Trading Company, GEORGETOWN, TX, U.S.A.
Valutazione del venditore 5 su 5 stelle
hardcover. Condizione: Good. Hardcover ex-library with typical marks shows moderate cover wear. Text is unmarked. Ships FAST!
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Process and device simulation for MOS-VLSI circuits
Lingua: Inglese
Editore: Martinus Nijhoff, Boston, MA, 1983
ISBN 10: 902472824X ISBN 13: 9789024728244
Da: Peter Rhodes, Southampton, Regno Unito
Valutazione del venditore 4 su 5 stelle
Prima edizione
EUR 176,35
Spedizione EUR 41,88
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloOriginal Cloth. 1st Edition. NATO ASI series. Series E, Applied sciences No. 62. 24 x 16 cm., xii, 619 pp. The book is covered in white cloth with black lettering on the spine and front. CONDITION. VG+/ no dj. The pages are clean and tight. The corners and ends of the spine are lightly rubbed. Library marks and labels on spine and front end papers. Library stamps on page edges. Ex-Library.
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EDA for IC Implementation, Circuit Design, and Process Technology (Electronic Design Automation for Integrated Circuits Hdbk)
Libro 1 di 2: Electronic Design Automation for Integrated Circuits HdbkDa: Chiron Media, Wallingford, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 209,13
Spedizione EUR 18,17
Spedito da Regno Unito a U.S.A.Quantità: 5 disponibili
Aggiungi al carrelloHardcover. Condizione: New.
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Process and Device Simulation for MOS-VLSI Circuits (NATO Science Series E:, 62)
Da: Mispah books, Redhill, SURRE, Regno Unito
Valutazione del venditore 4 su 5 stelle
EUR 216,22
Spedizione EUR 29,32
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrellohardcover. Condizione: Good. Good. Dust Jacket NOT present. CD WILL BE MISSING. . SHIPS FROM MULTIPLE LOCATIONS. book.
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EDA for IC Implementation, Circuit Design, and Process Technology (Electronic Design Automation for Integrated Circuits Hdbk)
Libro 1 di 2: Electronic Design Automation for Integrated Circuits HdbkDa: BennettBooksLtd, Los Angeles, CA, U.S.A.
Valutazione del venditore 5 su 5 stelle
Hardcover. Condizione: New. In shrink wrap. Looks like an interesting title!
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Technology CAD ? Computer Simulation of IC Processes and Devices (The Springer International Series in Engineering and Computer Science, 243)
Libro 175 di 260: The Springer International Series in Engineering and Computer ScienceDa: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 253,09
Spedizione EUR 14,05
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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Technology CAD ? Computer Simulation of IC Processes and Devices (The Springer International Series in Engineering and Computer Science)
Libro 175 di 260: The Springer International Series in Engineering and Computer ScienceDa: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 253,09
Spedizione EUR 14,05
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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Technology CAD ? Computer Simulation of IC Processes and Devices (The Springer International Series in Engineering and Computer Science, 243)
Libro 175 di 260: The Springer International Series in Engineering and Computer ScienceDa: BennettBooksLtd, Los Angeles, CA, U.S.A.
Valutazione del venditore 5 su 5 stelle
hardcover. Condizione: New. In shrink wrap. Looks like an interesting title!
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Technology CAD - Computer Simulation of IC Processes and Devices
Libro 175 di 260: The Springer International Series in Engineering and Computer ScienceDa: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 396.
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Technology CAD
Libro 175 di 260: The Springer International Series in Engineering and Computer ScienceLingua: Inglese
Editore: Kluwer Academic Publishers, 1993
ISBN 10: 0792393791 ISBN 13: 9780792393795
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Valutazione del venditore 5 su 5 stelle
EUR 291,90
Spedizione EUR 10,50
Spedito da Irlanda a U.S.A.Quantità: 15 disponibili
Aggiungi al carrelloCondizione: New. Presents a discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 373 pages, biography. BIC Classification: TBC; TJFD. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 22. Weight in Grams: 730. . 1993. Hardback. . . . .
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Technology CAD - Computer Simulation of IC Processes and Devices
Libro 175 di 260: The Springer International Series in Engineering and Computer ScienceEUR 244,86
Spedizione EUR 63,78
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model .
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Technology CAD ? Computer Simulation of IC Processes and Devices (The Springer International Series in Engineering and Computer Science (243))
Libro 175 di 260: The Springer International Series in Engineering and Computer ScienceDa: Mispah books, Redhill, SURRE, Regno Unito
Valutazione del venditore 4 su 5 stelle
EUR 320,10
Spedizione EUR 29,32
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Like New. Like New. book.
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Technology CAD
Libro 175 di 260: The Springer International Series in Engineering and Computer ScienceLingua: Inglese
Editore: Kluwer Academic Publishers, 1993
ISBN 10: 0792393791 ISBN 13: 9780792393795
Da: Kennys Bookstore, Olney, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
Condizione: New. Presents a discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 373 pages, biography. BIC Classification: TBC; TJFD. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 22. Weight in Grams: 730. . 1993. Hardback. . . . . Books ship from the US and Ireland.
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Technology CAD: Computer Simulation of IC Processes and Devices
Editore: Springer, New York, 2012
Da: 32.1 Rare Books + Ephemera, IOBA, ESA, Princeton, NJ, U.S.A.
Membro dell'associazione: IOBA
Valutazione del venditore 4 su 5 stelle
Hardcover. Condizione: Very Good. 8vo., 396 pp. Black and white illustrations. Index.
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Process and Device Simulation for MOS-VLSI Circuits (eng)
Da: Brook Bookstore On Demand, Napoli, NA, Italia
Valutazione del venditore 5 su 5 stelle
EUR 46,22
Spedizione EUR 8,00
Spedito da Italia a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: new. Questo è un articolo print on demand.
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Process and Device Simulation for MOS-VLSI Circuits
Lingua: Inglese
Editore: Springer Netherlands, Springer Netherlands Okt 2011, 2011
ISBN 10: 9400968442 ISBN 13: 9789400968448
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Valutazione del venditore 5 su 5 stelle
EUR 53,49
Spedizione EUR 23,00
Spedito da Germania a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations. 636 pp. Englisch.
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Process and Device Simulation for MOS-VLSI Circuits
Da: Majestic Books, Hounslow, Regno Unito
Valutazione del venditore 4 su 5 stelle
EUR 86,67
Spedizione EUR 7,62
Spedito da Regno Unito a U.S.A.Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand pp. 638 Illus.
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Process and Device Simulation for MOS-VLSI Circuits
Da: Biblios, Frankfurt am main, HESSE, Germania
Valutazione del venditore 4 su 5 stelle
EUR 84,93
Spedizione EUR 9,95
Spedito da Germania a U.S.A.Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. PRINT ON DEMAND pp. 638.
