Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659269042 ISBN 13: 9783659269042
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Editore: Lap Lambert Academic Publishing, 2012
ISBN 10: 3659269042 ISBN 13: 9783659269042
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Editore: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659269042 ISBN 13: 9783659269042
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Aggiungi al carrelloCondizione: New. Shailendra Singh is currently working as an Assistant Professor, Electronics and Communication Engineering at Pranveer Singh Institute of Technology, Kanpur, India. His research interest includes modeling and simulation of semiconductor .
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Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659269042 ISBN 13: 9783659269042
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Editore: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659269042 ISBN 13: 9783659269042
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Sharma NehaNEHA SHARMA: studied M.sc.(medical)Biochemistry at J.L.N.Medical college, Ajmer. Senior Demonstrator in Biochemistry at shri Ram murti smarak institute of Medical sciences, Bareilly, INDIA.This book is intended to meet.
Lingua: Inglese
Editore: Taylor & Francis Ltd, London, 2026
ISBN 10: 1041062672 ISBN 13: 9781041062677
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Hardcover. Condizione: new. Hardcover. This book comprehensively:Covers material for nanowires, device models, and applications for circuit design based on nanowire field-effect transistorsExplains a wide spectrum for designing robust multi-gate nanowire devices and low-power circuitsHighlights the conventional and novel nanomaterials, devices, and circuits, leakage current mitigation techniques, and important tradeoffs along with exhaustive analysisIncludes nanowire device structures and modeling along with MATLAB codesOffers an in-depth insight into the temporal degradation awareness and interconnects delay, which provides inside exposure to the impact of reductions in speed and consumption of more powerThe text is primarily written for senior undergraduates, graduate students, and academic researchers in electrical engineering, electronics and communications engineering, materials science, nanoscience, and nanotechnology. The book begins by discussing nanomaterials for nanowire transistors, two-dimensional (2D) materials in designing nanowires, notably in field-effect transistor (FET) electronics. It further discusses nanowire transistor performance limits and high-speed integrated nanowire circuitry. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Lingua: Inglese
Editore: Taylor & Francis Ltd, London, 2026
ISBN 10: 1041062672 ISBN 13: 9781041062677
Da: CitiRetail, Stevenage, Regno Unito
EUR 137,73
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Aggiungi al carrelloHardcover. Condizione: new. Hardcover. This book comprehensively:Covers material for nanowires, device models, and applications for circuit design based on nanowire field-effect transistorsExplains a wide spectrum for designing robust multi-gate nanowire devices and low-power circuitsHighlights the conventional and novel nanomaterials, devices, and circuits, leakage current mitigation techniques, and important tradeoffs along with exhaustive analysisIncludes nanowire device structures and modeling along with MATLAB codesOffers an in-depth insight into the temporal degradation awareness and interconnects delay, which provides inside exposure to the impact of reductions in speed and consumption of more powerThe text is primarily written for senior undergraduates, graduate students, and academic researchers in electrical engineering, electronics and communications engineering, materials science, nanoscience, and nanotechnology. The book begins by discussing nanomaterials for nanowire transistors, two-dimensional (2D) materials in designing nanowires, notably in field-effect transistor (FET) electronics. It further discusses nanowire transistor performance limits and high-speed integrated nanowire circuitry. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
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Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 195,84
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Aggiungi al carrelloBuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The book begins by discussing nanomaterials for nanowire transistors, two-dimensional (2D) materials in designing nanowires, notably in field-effect transistor (FET) electronics. It further discusses nanowire transistor performance limits and high-speed integrated nanowire circuitry.
Da: preigu, Osnabrück, Germania
EUR 191,25
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Aggiungi al carrelloBuch. Condizione: Neu. Nanowire | Materials, Devices, Circuits, and Applications | Shailendra Singh (u. a.) | Buch | Einband - fest (Hardcover) | Englisch | 2026 | CRC Press | EAN 9781041062677 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.
Lingua: Inglese
Editore: Taylor & Francis Ltd, London, 2026
ISBN 10: 1041062672 ISBN 13: 9781041062677
Da: AussieBookSeller, Truganina, VIC, Australia
EUR 272,62
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Aggiungi al carrelloHardcover. Condizione: new. Hardcover. This book comprehensively:Covers material for nanowires, device models, and applications for circuit design based on nanowire field-effect transistorsExplains a wide spectrum for designing robust multi-gate nanowire devices and low-power circuitsHighlights the conventional and novel nanomaterials, devices, and circuits, leakage current mitigation techniques, and important tradeoffs along with exhaustive analysisIncludes nanowire device structures and modeling along with MATLAB codesOffers an in-depth insight into the temporal degradation awareness and interconnects delay, which provides inside exposure to the impact of reductions in speed and consumption of more powerThe text is primarily written for senior undergraduates, graduate students, and academic researchers in electrical engineering, electronics and communications engineering, materials science, nanoscience, and nanotechnology. The book begins by discussing nanomaterials for nanowire transistors, two-dimensional (2D) materials in designing nanowires, notably in field-effect transistor (FET) electronics. It further discusses nanowire transistor performance limits and high-speed integrated nanowire circuitry. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.