Hadis morkoc (68 risultati)

Condizione: New. pp. 432.

Condizione: New. pp. 432.

Condizione: New. pp. 432.

Hardcover. Condizione: Very Good. No Jacket. 1st Edition. Very good condition. Minor edgewear. Light soiling to covers. All intact. No writing or marking. Not Ex-Library.

Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condizione: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.…

Hardcover. Condizione: New. ISBN:9780125070621.

Hardcover, Leinen-Einband. Condizione: Sehr gut. 1. Auflage. Proceedings of the Second OSA-IEEE LEOS Incline Village, Nevada, January 14-16, 1987 Springer Series in Electronics and Photonics, 24, Band 24 Zustand: ausgestempeltes Bibliotheksexemplar, GUTER Zustand. HC1-326-7/8-00770906 Sprache: Englisch Gewicht in Gramm: 556. …

Condizione: New.

Gebunden. Condizione: Gut. Gebraucht - Gut Zustand: Gut, XXIV, 492 pp. 271 figs., 23 tabs. About this book: This is a unique book devoted to the important class of nitride semiconductors and devices. Numerous tables and figures detailing properties and performance devices are compiled. Structural, electrical and optical properties of nitrides and substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies (contacts), dopant incorporation and analyses, pn-junctions, light-emitting diodes, and blue lasers are treated succinctly. Attention is paid to both technological issues and fundamentals. Written for scientists and graduate students. …

Condizione: New. In English.

Condizione: New. pp. 308.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Over the past five years, there has been an enormous increase in the inter est in and understanding of electronic and optoelectronic devices operating in the picosecond (multigigahertz) range. This has been fueled in a sig nificant way by the spectacular advances in picosecond laser technology, electro optic sampling, III-V devices, and wideband fiber optic systems. Partly to address these advances, a new conference jointly sponsored by the IEEE Lasers and Electrooptics Society (IEEE (LEOS)) and the Op tical Society of America (OSA) was founded and its first meeting held in March 1985. The purpose of this meeting was to bring together work ers in the areas of electronics and optoelectronics who share a common interest in the physics and technology of picosecond solid-state electronic and optoelectronic devices, their multigigahertz applications, and ultrafast measurement techniques. Emphasis was placed on the interdisciplinary as pects of these areas, since each area is covered by its own topical meeting. This meeting was quite successful and led to a second meeting, of which this volume forms the proceedings.…

Paperback. Condizione: Brand New. reprint edition. 302 pages. 9.25x6.10x0.70 inches. In Stock.

Hardcover. Condizione: Fine. Condizione sovraccoperta: No Dust Jacket as Published. 1st. (UK) Presumed 1st editions. Owner's name to inside front cover,no other markings, Fine; no dustjackets as published. Hardcovers (Desing and measurement in electronic engineering). Volume 1: xii, 1-262pp, then 8pp index, diagrams. Volume 2: xi, 263- 510, then 8pp index, graphs, diagrams. These texts explain the modulation doped field effect transistor: fundamentals, technology and performance of MODFETs in micorwave and digital devices. Volume 2 deals with experimental and technological aspects of 2-dimensional transport, the properties of 2-dimensional electron gas under the influences of an external field. The authors were with the Univeristy of Illinois at Urbana-Champaign. Two volumes. (3.5 JM 0815 Size: 8vo - over 7¾" - 9¾".…

Condizione: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.…

Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 404 | Sprache: Englisch | Produktart: Bücher | Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.…

Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Hardcover. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Hardcover. Condizione: Like New. Like New. book.

Condizione: As New. Unread book in perfect condition.

Hardcover. Condizione: New. US SELLER SHIPS FROM USA.

Condizione: New.

Condizione: New.

Condizione: As New. Unread book in perfect condition.

Taschenbuch. Condizione: Neu. Nitride Semiconductors and Devices | Hadis Morkoç | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2012 | Springer | EAN 9783642636479 | Verantwortliche Person für die EU: Lauinger, Sonia, Sonia Lauinger, Lauinger Verlag, Heinrich-Köhler-Platz 8, 76187 Karlsruhe, mail[at]lauinger-verlag[dot]de | Anbieter: preigu. …

Condizione: New. In English.

Condizione: New. In English.

Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim al. [3] in 1959 employed the same technique to produce small cry meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.…

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim al. [3] in 1959 employed the same technique to produce small cry meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.…