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  • Lingua: Inglese

    Editore: Springer, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices

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    EUR 64,09

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  • Lingua: Inglese

    Editore: Springer, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices

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  • Lingua: Inglese

    Editore: Springer, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections

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    EUR 68,81

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    Condizione: New. In English.

  • Lingua: Inglese

    Editore: Springer, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: Books Puddle, Woodside, NY, U.S.A.Books Puddle

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    EUR 86,68

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    Quantità: 4 disponibili

    Condizione: New. pp. 288.

  • Lingua: Inglese

    Editore: Springer, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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    EUR 66,40

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    Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.…

  • Lingua: Inglese

    Editore: Springer, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand

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    EUR 46,22

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    Condizione: new. Questo è un articolo print on demand.

  • Lingua: Inglese

    Editore: Springer 2011-12, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: Chiron Media, Wallingford, Regno UnitoChiron Media

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    EUR 58,79

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    PF. Condizione: New. This item is printed on demand. Brand new book, sourced directly from publisher. Dispatch time is 6-7 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

  • Lingua: Inglese

    Editore: Springer Vienna Dez 2011, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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    EUR 53,49

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    Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes. 288 pp. Englisch.…

  • Lingua: Inglese

    Editore: Springer, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: Majestic Books, Hounslow, Regno UnitoMajestic Books

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    EUR 87,27

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    Condizione: New. Print on Demand pp. 288 95 Figures, 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam.

  • Lingua: Inglese

    Editore: Springer Vienna, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: moluna, Greven, Germaniamoluna

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    EUR 48,37

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    Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconduct.…

  • Lingua: Inglese

    Editore: Springer, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios

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    EUR 87,64

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    Condizione: New. PRINT ON DEMAND pp. 288.

  • Lingua: Inglese

    Editore: Springer, Springer Dez 2011, 2011

    3709190975 / 9783709190975

    Serie: Libro 6 di 17 - Computational Microelectronics

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    Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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    Condizione: Nuovo

    EUR 53,49

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    Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 288 pp. Englisch.…