Jagadeesh chandra s v (51 risultati)

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Taschenbuch. Condizione: Neu. INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS | Microelectronic device applications | S. V. Jagadeesh Chandra (u. a.) | Taschenbuch | 188 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783843394222 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.…

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Taschenbuch. Condizione: Neu. Films diélectriques à haute valeur k en oxyde de tantale dopé au zirconium pour dispositifs MOS | Conception CMOS | S. V. Jagadeesh Chandra (u. a.) | Taschenbuch | Französisch | 2022 | Editions Notre Savoir | EAN 9786205216996 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

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Taschenbuch. Condizione: Neu. Filmes dieléctricos de alto teor de óxido de zircónio dopado de óxido de tântalo para dispositivos MOS | Desenho CMOS | S. V. Jagadeesh Chandra (u. a.) | Taschenbuch | Portugiesisch | 2022 | Edições Nosso Conhecimento | EAN 9786205216880 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

Taschenbuch. Condizione: Neu. Film dielettrici high-k di ossido di tantalio drogato con zirconio per dispositivi MOS | Progettazione CMOS | S. V. Jagadeesh Chandra (u. a.) | Taschenbuch | Italienisch | 2022 | Edizioni Sapienza | EAN 9786205216873 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

Taschenbuch. Condizione: Neu. Mit Zirkonium dotierte Tantaloxid-High-k-Dielektrikumsschichten für MOS-Bauelemente | CMOS-Entwurf | S. V. Jagadeesh Chandra (u. a.) | Taschenbuch | 52 S. | Deutsch | 2022 | Verlag Unser Wissen | EAN 9786205216972 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

paperback. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. A novel mixed high-k gate dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx) and Hafnium-doped tantalum oxide (Hf-doped TaOx) has been thoroughly studied for future MOSFET applications. Deposition of new high-k gate dielectric by mixing of Ta2O5 with ZrO2 and HfO2 using co-sputtering technique, to reach the requirements of thermodynamic stability, high range of amorphous-to-crystalline transition temperature, a large electrical band gap, and a large energy band barrier with Si for ULSI era. Extensive studies on the fabrication process and device characteristics have been accomplished. Hence this book is useful for the readers to know some significant issue on mixed high-k gate dielectric materials for high frequency devices. 60 pp. Englisch.…

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Los dieléctricos de alta permitividad y los sustratos adecuados se estudian intensamente con vistas a su uso en el diseño de VLSI. Se ha estudiado a fondo un nuevo material dieléctrico de puerta de alta k, es decir, óxido de tantalio dopado con circonio (TaOx dopado con Zr) y óxido de tantalio dopado con hafnio (TaOx dopado con Hf) para futuras aplicaciones MOSFET. La deposición de un nuevo dieléctrico de puerta de alto k mediante la mezcla de Ta2O5 con ZrO2 y HfO2 utilizando la técnica de co-sputtering, para alcanzar los requisitos de estabilidad termodinámica, un alto rango de temperatura de transición amorfa a cristalina, una gran brecha de banda eléctrica y una gran barrera de banda de energía con el Si para la era ULSI. Se han realizado amplios estudios sobre el proceso de fabricación y las características del dispositivo. Por lo tanto, este libro es útil para que los lectores conozcan algunas cuestiones importantes sobre los materiales dieléctricos de puerta mixta de alto k para dispositivos de alta frecuencia. 52 pp. Spanisch.…

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. A novel mixed high-k gate dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx) and Hafnium-doped tantalum oxide (Hf-doped TaOx) has been thoroughly studied for future MOSFET applications. Deposition of new high-k gate dielectric by mixing of Ta2O5 with ZrO2 and HfO2 using co-sputtering technique, to reach the requirements of thermodynamic stability, high range of amorphous-to-crystalline transition temperature, a large electrical band gap, and a large energy band barrier with Si for ULSI era. Extensive studies on the fabrication process and device characteristics have been accomplished. Hence this book is useful for the readers to know some significant issue on mixed high-k gate dielectric materials for high frequency devices.…

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Jagadeesh Chandra S.V.Dr. S.V. Jagadeesh Chandra, Professor, Dept of ECE, LBRCE,Mylavaram. He published 2 books and 35 scientific articles in referred journals. M. Kumar, Sungkyunkwan University, South Korea. He published 02 internat. …

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: T. V. RajeshT.V.Rajesh, Deakin University, Australia. He published two International papers. Dr.S.V.Jagadeesh Chandra, Professor of LBRCE, Mylavaram. He published 1 book and 35 scientific articles in referred journals. Dr. CH.V.V.Ram.…

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Les diélectriques à haute permittivité et les substrats appropriés font l'objet d'études intensives en vue de leur utilisation dans la conception de VLSI. Un nouveau matériau diélectrique de grille mixte à haute k, c'est-à-dire l'oxyde de tantale dopé au zirconium (TaOx dopé au Zr) et l'oxyde de tantale dopé au hafnium (TaOx dopé au Hf), a été étudié de manière approfondie pour les futures applications MOSFET. Dépôt d'un nouveau diélectrique de grille à k élevé par mélange de Ta2O5 avec du ZrO2 et du HfO2 en utilisant la technique de co-pulvérisation, afin d'atteindre les exigences de stabilité thermodynamique, une gamme élevée de température de transition amorphe-cristalline, une large bande interdite électrique et une large barrière de bande d'énergie avec le Si pour l'ère ULSI. Des études approfondies sur le processus de fabrication et les caractéristiques des dispositifs ont été réalisées. Ce livre est donc utile aux lecteurs pour connaître certaines questions importantes sur les matériaux diélectriques de grille mixtes à haut k pour les dispositifs à haute fréquence. 52 pp. Französisch.…

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications. 188 pp. Englisch.…

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Los dieléctricos de alta permitividad y los sustratos adecuados se estudian intensamente con vistas a su uso en el diseño de VLSI. Se ha estudiado a fondo un nuevo material dieléctrico de puerta de alta k, es decir, óxido de tantalio dopado con circonio (TaOx dopado con Zr) y óxido de tantalio dopado con hafnio (TaOx dopado con Hf) para futuras aplicaciones MOSFET. La deposición de un nuevo dieléctrico de puerta de alto k mediante la mezcla de Ta2O5 con ZrO2 y HfO2 utilizando la técnica de co-sputtering, para alcanzar los requisitos de estabilidad termodinámica, un alto rango de temperatura de transición amorfa a cristalina, una gran brecha de banda eléctrica y una gran barrera de banda de energía con el Si para la era ULSI. Se han realizado amplios estudios sobre el proceso de fabricación y las características del dispositivo. Por lo tanto, este libro es útil para que los lectores conozcan algunas cuestiones importantes sobre los materiales dieléctricos de puerta mixta de alto k para dispositivos de alta frecuencia. …

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. A novel mixed high-k gate dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx) and Hafnium-doped tantalum oxide (Hf-doped TaOx) has been thoroughly studied for future MOSFET applications. Deposition of new high-k gate dielectric by mixing of Ta2O5 with ZrO2 and HfO2 using co-sputtering technique, to reach the requirements of thermodynamic stability, high range of amorphous-to-crystalline transition temperature, a large electrical band gap, and a large energy band barrier with Si for ULSI era. Extensive studies on the fabrication process and device characteristics have been accomplished. Hence this book is useful for the readers to know some significant issue on mixed high-k gate dielectric materials for high frequency devices.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 60 pp. Englisch.…

Taschenbuch. Condizione: Neu. Zirconium doped tantalum oxide high-k dielectric films for MOS devices | CMOS design | S. V. Jagadeesh Chandra (u. a.) | Taschenbuch | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9783330346840 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Demand. …