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Quantum Physics of Semiconductor Materials and Devices
Da: GreatBookPrices, Columbia, MD, U.S.A.
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Edizione InternazionalePOLARIZATION EFFECTS IN SEMICONDUCTORS FROM AB INITIO THEORY TO DEVICE APPLICATIONS (HB 2008)
Da: UK BOOKS STORE, London, LONDO, Regno Unito
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EUR 78,84
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Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloCondizione: New. Brand New ! Fast Delivery "International Edition " and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 4-6 Working days .and we do have flat rate for up to 2LB. Extra shipping charges will be requested This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.
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Quantum Physics of Semiconductor Materials and Devices
Da: GreatBookPrices, Columbia, MD, U.S.A.
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Polarization Effects in Semiconductors : From Ab Initio Theory to Device Applications
Da: Better World Books, Mishawaka, IN, U.S.A.
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Condizione: Very Good. Former library copy. Pages intact with possible writing/highlighting. Binding strong with minor wear. Dust jackets/supplements may not be included. Includes library markings. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.
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Quantum Physics of Semiconductor Materials and Devices
Da: GreatBookPricesUK, Woodford Green, Regno Unito
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EUR 97,49
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Polarization Effects in Semiconductors
Da: Books Puddle, New York, NY, U.S.A.
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Condizione: New. pp. 532.
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Polarization Effects in Semiconductors
Da: Majestic Books, Hounslow, Regno Unito
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EUR 113,88
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Aggiungi al carrelloCondizione: New. pp. 532 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
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Quantum Physics of Semiconductor Materials and Devices
Da: GreatBookPricesUK, Woodford Green, Regno Unito
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EUR 109,52
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Polarization Effects In Semiconductors
Da: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.
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Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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High-Frequency GaN Electronic Devices
Da: Ria Christie Collections, Uxbridge, Regno Unito
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EUR 127,63
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Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
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Quantum Physics of Semiconductor Materials and Devices
Da: Revaluation Books, Exeter, Regno Unito
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EUR 124,20
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Aggiungi al carrelloPaperback. Condizione: Brand New. 896 pages. 9.69x7.44x1.81 inches. In Stock.
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Quantum Physics of Semiconductor Materials and Devices
Da: GreatBookPrices, Columbia, MD, U.S.A.
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EUR 156,61
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Quantum Physics of Semiconductor Materials and Devices (Hardcover)
Lingua: Inglese
Editore: Oxford University Press, Oxford, 2022
ISBN 10: 0198856849 ISBN 13: 9780198856849
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Valutazione del venditore 5 su 5 stelle
Hardcover. Condizione: new. Hardcover. > "Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory> ". - Asher PeresSemiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamentalmaterials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experienceto make each topic as tangible and accessible as possible to students at all levels.Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years todispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then requireprerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures. Aimed at upper-level undergraduate students and graduate students in Electrical Engineering, Physics, Applied Physics, Materials Science, and Engineering, this textbook covers the quantum physics of semiconductors, including their practical applications in various areas and their future potential. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Quantum Physics of Semiconductor Materials and Devices
Da: GreatBookPrices, Columbia, MD, U.S.A.
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EUR 158,81
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
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High-Frequency GaN Electronic Devices
Da: Books Puddle, New York, NY, U.S.A.
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Condizione: New. pp. VIII, 309 221 illus., 199 illus. in color. 1 Edition NO-PA16APR2015-KAP.
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Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications
Da: BennettBooksLtd, Los Angeles, CA, U.S.A.
Valutazione del venditore 5 su 5 stelle
hardcover. Condizione: New. In shrink wrap. Looks like an interesting title!
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Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications
Da: Ria Christie Collections, Uxbridge, Regno Unito
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EUR 164,24
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EUR 113,10
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. High-Frequency GaN Electronic Devices | Patrick Fay (u. a.) | Taschenbuch | viii | Englisch | 2020 | Springer | EAN 9783030202101 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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High-Frequency GaN Electronic Devices
Da: Ria Christie Collections, Uxbridge, Regno Unito
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EUR 176,43
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Aggiungi al carrelloCondizione: New. In.
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High-Frequency GaN Electronic Devices
Lingua: Inglese
Editore: Springer International Publishing, 2020
ISBN 10: 3030202100 ISBN 13: 9783030202101
EUR 128,39
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Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;Provides 'vertically integrated' coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;Includes fundamental physics, as well as numerical simulations and experimental realizations.
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Polarization Effects in Semiconductors
Da: Biblios, Frankfurt am main, HESSE, Germania
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EUR 186,57
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Aggiungi al carrelloCondizione: Used. pp. 532.
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EUR 145,50
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Polarization Effects in Semiconductors | From Ab Initio Theory to Device Applications | Colin Wood (u. a.) | Taschenbuch | xiv | Englisch | 2010 | Springer | EAN 9781441942289 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Polarization Effects in Semiconductors
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 532.
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High-Frequency GaN Electronic Devices
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 309.
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Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications
Da: Ria Christie Collections, Uxbridge, Regno Unito
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EUR 225,23
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EUR 173,89
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices.The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the 'Polarization Effects in Semiconductors' DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
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Quantum Physics of Semiconductor Materials and Devices
Da: Revaluation Books, Exeter, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 221,47
Spedizione EUR 23,14
Spedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 896 pages. 9.96x7.64x1.81 inches. In Stock.
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High-Frequency GaN Electronic Devices
Da: Mispah books, Redhill, SURRE, Regno Unito
Valutazione del venditore 4 su 5 stelle
EUR 215,66
Spedizione EUR 28,92
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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High-Frequency GaN Electronic Devices
Lingua: Inglese
Editore: Springer International Publishing, 2019
ISBN 10: 3030202070 ISBN 13: 9783030202071
EUR 181,89
Spedizione EUR 63,24
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;Provides 'vertically integrated' coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;Includes fundamental physics, as well as numerical simulations and experimental realizations.
-
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications
Da: Mispah books, Redhill, SURRE, Regno Unito
Valutazione del venditore 4 su 5 stelle
EUR 238,29
Spedizione EUR 28,92
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: Like New. Like New. book.
