Junjing bao (13 risultati)

Paperback. Condizione: New.

Condizione: New.

Condizione: New. pp. 216.

Taschenbuch. Condizione: Neu. Plasma and Low- Dielectric Materials | Interaction and Application in Advanced Semiconductor Technology | Junjing Bao | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2009 | VDM Verlag Dr. Müller | EAN 9783639153019 | Verantwortliche Person für die EU: OmniScriptum GmbH & Co. KG, Bahnhofstr. 28, 66111 Saarbrücken, info[at]akademikerverlag[dot]de | Anbieter: preigu. …

Paperback. Condizione: New.

paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

PF. Condizione: New. This item is printed on demand. Brand new book, sourced directly from publisher. Dispatch time is 6-7 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.

PAP. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

PAP. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Kartoniert / Broschiert. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Bao JunjingJunjing (Jerry) Bao is an advisory engineer at IBM Systems & nTechnology Group in New York. He was a research assistant at the nInterconnect & Pckaging Group at the University of Texas at nAustin and obtained his PhD in ph.…

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - With the scaling of devices, integration of porous ultra low-k materials into Cu interconnect becomes imperative. Low-k dielectric materials consist of methyl groups and pores incorporated into a silicon dioxide backbone structure to reduce the dielectric constant. Plasma is widely used in semiconductor industry for deposition, etching, stripping etc. This book explores the interaction between plasma and low-k dielectric materials and their application in advanced semiconductor processes. It mainly consists of two parts. First, plasma assists the atomic layer deposition of Ta based Cu barriers. Experiments, coupled with Monte Carlo simulation proved that plasma alters low-k surfaces and generates favorable surface function groups for subsequent Ta/TaN deposition. Second, plasma degrades properties of low-k materials through methyl depletion. Mechanism of plasma damage to blanket and pattern low-k films was discussed. Then techniques for low-k repair, such as methane beam and silylation, were demonstrated.…

Condizione: New. Print on Demand pp. 216 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Condizione: New. PRINT ON DEMAND pp. 216.