Michele ghidotti (3 risultati)
- Brossura
Da: preigu, Osnabrück, Germaniapreigu
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 57,95
EUR 70,00 spedizioneSpedito da Germania a U.S.A.Quantità: 5 disponibili
Taschenbuch. Condizione: Neu. Reliability Issues in Ultra-Scaled Flash Memories | Michele Ghidotti | Taschenbuch | Englisch | VDM Verlag Dr. Müller | EAN 9783639293616 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
- Brossura
- Print on Demand
Da: moluna, Greven, , Germaniamoluna
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 52,71
EUR 48,99 spedizioneSpedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Kartoniert / Broschiert. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Ghidotti MicheleMichele Ghidotti was born in Cremona, Italy, in 1981. He received the Bachelor s and Master s degrees in electrical engineering and the Ph.D. degree in informat…ion technology from Politecnico di Milano, Milano, Ital.
- Brossura
- Print on Demand
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 68,82
EUR 61,28 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The constant improvements in the silicon technology have resulted in a continuous reduction of the electron devices feature size. These technological developments strongly impact in device performance. One of the most important reliabil…ity issues in the last technological nodes is the Random Telegraph Noise (RTN). This is phenomenon affects the threshold voltage (VT) of the memory cell. A physics-based statistical model is presented and validated. Beyond the 60nm technology node, the granularity of the charge stored in the device is not more negligible and this fact influences the accuracy to perform the program operation. The statistical nature of the electrons injection into the floating gate spreads the VT distribution of the array cells. The feature size reduction affects negatively the distribution and it becomes more and more difficult to control the cell VT by the program algorithm. Another issue in sub-100nm technologies concerns the cell-to-cell interference. The VT loss displays a dependence on the program pattern of the adjacent cells. All these phenomena contribute all together to corrupt the data stored, causing the memory failure and thus the worn-out.
