Mohamed elshamy (5 risultati)

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  • Lingua: Inglese

    Editore: LAP LAMBERT Academic Publishing, 2015

    3659783137 / 9783659783135

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    Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books

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    Condizione: Nuovo

    EUR 178,42

    EUR 29,46 spedizione 
    Spedito da Regno Unito a U.S.A.

    Quantità: 1 disponibile

    paperback. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

  • Lingua: Inglese

    Editore: LAP LAMBERT Academic Publishing Sep 2015, 2015

    3659783137 / 9783659783135

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    Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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    Condizione: Nuovo

    EUR 54,90

    EUR 23,00 spedizione 
    Spedito da Germania a U.S.A.

    Quantità: 2 disponibili

    Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano-computing facilities. The recently found memristor, 'the missing fourth circuit element', is a potential candidate for the next-generation memory and has received extra attention in the last few years. In this book, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Besides, memristor-based memory Read/Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element. This work is targeting at solving this issue by providing three novel Read/Write circuit designs to facilitate the reading and writing operation of the memristor device. The proposed circuits exhibit lower power consumption and less delay when compared to recently published Read/Write circuits. In addition, two of the proposed circuits have the advantage of non-destructive successive reading cycles capability as well as occupying small layout area. 100 pp. Englisch.…

  • Lingua: Inglese

    Editore: LAP LAMBERT Academic Publishing, 2015

    3659783137 / 9783659783135

    • Brossura
    • Print on Demand

    Da: moluna, Greven, Germaniamoluna

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    Condizione: Nuovo

    EUR 45,45

    EUR 48,99 spedizione 
    Spedito da Germania a U.S.A.

    Quantità: Più di 20 disponibili

    Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Elshamy MohamedMohamed Elshamy, Hassan Mostafa, and M. Sameh Said are with Cairo University, Cairo, Egypt. Hassan Mostafa is with the Center for Nanoelectronics and Devices (CND) at Zewail City for Science and Technology and the Amer.…

  • Lingua: Inglese

    Editore: LAP LAMBERT Academic Publishing Sep 2015, 2015

    3659783137 / 9783659783135

    • Brossura
    • Print on Demand

    Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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    Condizione: Nuovo

    EUR 54,90

    EUR 60,00 spedizione 
    Spedito da Germania a U.S.A.

    Quantità: 1 disponibile

    Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano-computing facilities. The recently found memristor, 'the missing fourth circuit element', is a potential candidate for the next-generation memory and has received extra attention in the last few years. In this book, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Besides, memristor-based memory Read/Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element. This work is targeting at solving this issue by providing three novel Read/Write circuit designs to facilitate the reading and writing operation of the memristor device. The proposed circuits exhibit lower power consumption and less delay when compared to recently published Read/Write circuits. In addition, two of the proposed circuits have the advantage of non-destructive successive reading cycles capability as well as occupying small layout area.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 100 pp. Englisch.…

  • Lingua: Inglese

    Editore: LAP LAMBERT Academic Publishing, 2015

    3659783137 / 9783659783135

    • Brossura
    • Print on Demand

    Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

    Venditore con 5 stelle
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    Condizione: Nuovo

    EUR 54,90

    EUR 60,84 spedizione 
    Spedito da Germania a U.S.A.

    Quantità: 1 disponibile

    Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano-computing facilities. The recently found memristor, 'the missing fourth circuit element', is a potential candidate for the next-generation memory and has received extra attention in the last few years. In this book, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Besides, memristor-based memory Read/Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element. This work is targeting at solving this issue by providing three novel Read/Write circuit designs to facilitate the reading and writing operation of the memristor device. The proposed circuits exhibit lower power consumption and less delay when compared to recently published Read/Write circuits. In addition, two of the proposed circuits have the advantage of non-destructive successive reading cycles capability as well as occupying small layout area.…