Condizione: good. Supports Goodwill of Silicon Valley job training programs. The cover and pages are in Good condition! Any other included accessories are also in Good condition showing use. Use can include some highlighting and writing, page and cover creases as well as other types visible wear.
Lingua: Inglese
Editore: Materials Research Society, 2004
ISBN 10: 1558997636 ISBN 13: 9781558997639
Da: CONTINENTAL MEDIA & BEYOND, Ocala, FL, U.S.A.
Condizione: Used: Good. xlibrary 2004 hc no dj as issued vol 813 withdrawn stamp in book/ on edge of pages clean crisp pages rare and out of print 189 pages::: K-19.
EUR 41,12
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Aggiungi al carrelloPaperback. Condizione: New. Erstauflage.
Da: Antiquariat Bookfarm, Löbnitz, Germania
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Aggiungi al carrelloHardcover. S. 1092-1323 Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. Ex-library with stamp and library-signature. GOOD condition, some traces of use. 9783527405121 Sprache: Englisch Gewicht in Gramm: 550.
Da: Storisende Versandbuchhandlung, Melle, Germania
EUR 2,90
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Aggiungi al carrelloCondizione: befriedigend. Sprache: deutsch Leinen ,Schutzumschlag fehlt.
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 161,77
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Da: GreatBookPrices, Columbia, MD, U.S.A.
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Da: California Books, Miami, FL, U.S.A.
EUR 178,41
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Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 161,76
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Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 161,76
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Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 180,10
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Condizione: New. pp. 260.
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 168,73
Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 254,26
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Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 244,81
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Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 283,88
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Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 266,10
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Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 241,87
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Neuware - Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
Da: Revaluation Books, Exeter, Regno Unito
EUR 338,46
Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 216 pages. 10.00x7.00x0.49 inches. In Stock.
Editore: MRS, 1998
Da: Martinton Book Company, Martinton, IL, U.S.A.
Fine condition. Hardbound. No Marks.
EUR 37,03
Quantità: 3 disponibili
Aggiungi al carrelloPaperback. Condizione: New. Erstauflage.
Lingua: Inglese
Editore: Springer Netherlands Aug 2005, 2005
ISBN 10: 1402034733 ISBN 13: 9781402034732
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 160,49
Quantità: 2 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV. 256 pp. Englisch.
Da: moluna, Greven, Germania
EUR 136,16
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Aggiungi al carrelloGebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Latest research results on the fabrication and fundamental understanding of ZnO and ZnO based devicesZnO bulk and layer growth of undoped and p-type doped material, influence of impurities (oxygen, hydrogen, transition metals) on electrical and op.
Lingua: Inglese
Editore: Springer, Springer Aug 2005, 2005
ISBN 10: 1402034733 ISBN 13: 9781402034732
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 160,49
Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on ¿Zinc oxide as a material for micro- and optoelectronic applications¿, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 ¿ 40 meV and 60 ¿ 70 meV.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 256 pp. Englisch.
Da: Majestic Books, Hounslow, Regno Unito
EUR 221,62
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand pp. 260 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 220,54
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. PRINT ON DEMAND pp. 260.