Sarkar mitra barun (39 risultati)

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

Condizione: New.

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

Taschenbuch. Condizione: Neu. Synthesis & Characterization of Nanodot Embedded MOS-C for the NVM | An Innovative Approach in Nano-Technology | Mitra Barun Sarkar (u. a.) | Taschenbuch | 56 S. | Englisch | 2015 | LAP LAMBERT Academic Publishing | EAN 9783659670398 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

Condizione: New.

Condizione: New.

Condizione: New.

Condizione: New.

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

Taschenbuch. Condizione: Neu. Synthèse et caractérisation de circuits MOS-C intégrant des nanodots pour la mémoire non volatile | Une approche innovante en nanotechnologie | Mitra Barun Sarkar (u. a.) | Taschenbuch | Französisch | 2026 | Editions Notre Savoir | EAN 9786630083576 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

Condizione: New.

Condizione: New.

Condizione: New.

Condizione: New.

Taschenbuch. Condizione: Neu. Síntese e caracterização de MOS-C com nanopontos incorporados para memória não volátil | Uma abordagem inovadora na nanotecnologia | Mitra Barun Sarkar (u. a.) | Taschenbuch | Portugiesisch | 2026 | Edições Nosso Conhecimento | EAN 9786630091250 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

Taschenbuch. Condizione: Neu. Sintesi e caratterizzazione di MOS-C con nanopunti incorporati per la memoria non volatile | Un approccio innovativo nel campo delle nanotecnologie | Mitra Barun Sarkar (u. a.) | Taschenbuch | Italienisch | 2026 | Edizioni Sapienza | EAN 9786630086133 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

Taschenbuch. Condizione: Neu. Synteza i charakterystyka uk¿adów MOS-C z wbudowanymi nanokropkami do zastosowa¿ w pami¿ciach NVM | Mitra Barun Sarkar (u. a.) | Taschenbuch | Polnisch | 2026 | Wydawnictwo Nasza Wiedza | EAN 9786630088694 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

Taschenbuch. Condizione: Neu. Synthese und Charakterisierung von MOS-C mit eingebetteten Nanopunkten für nichtflüchtige Speicher | Ein innovativer Ansatz in der Nanotechnologie | Mitra Barun Sarkar (u. a.) | Taschenbuch | 52 S. | Deutsch | 2026 | Verlag Unser Wissen | EAN 9786630078459 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Achieving lower dimensional electronic device in today s world has been increased enormously. Miniaturization technique has been improved in connection to maintain noble device properties. Processes incorporated to nano range fabrication are always intricate, as various quantum size effects play important role in this regime. Understanding the physics of low-dimensional systems and the operation of next-generation electronics will be helpful in bringing revolutionary changes to mankind. Phenomena surrounding the nanoparticles have been discussed and the discussion has been divided into two broad categories: synthesis and characterization of the nanoparticles embedded MOS capacitor. Capacitance peaks in the inversion region due to carrier tunneling into the quantum dot and Coulomb blockade charging in quantum dot has been observed, which elucidated the charge storing phenomena of nanoparticles. 56 pp. Englisch.…

Paperback. Condizione: new. Paperback. La mise au point de dispositifs electroniques de faible dimension a connu un essor considerable au cours des dernieres annees. Les techniques de miniaturisation ont ete perfectionnees afin de preserver les proprietes essentielles des dispositifs. Les procedes utilises pour la fabrication a l'echelle nanometrique sont toujours complexes, car divers effets de taille quantique jouent un role important a ce niveau. La comprehension de la physique des systemes de faible dimension et du fonctionnement de l'electronique de nouvelle generation contribuera a apporter des changements revolutionnaires a l'humanite. Les phenomenes lies aux nanoparticules ont ete abordes, et la discussion a ete divisee en deux grandes categories: la synthese et la caracterisation du condensateur MOS a nanoparticules integrees. Des pics de capacite dans la region d'inversion, dus au tunneling des porteurs dans le point quantique et a la charge par blocage de Coulomb dans le point quantique, ont ete observes, ce qui a permis d'elucider les phenomenes de stockage de charge des nanoparticules. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.…

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Sarkar Mitra BarunMitra Barun Sarkar is currently assistant professor in E.C.E department of National Institute of Technology, Agartala (NIT A), India. He has several publications in reputed journals. His area of research interests .…

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Achieving lower dimensional electronic device in today's world has been increased enormously. Miniaturization technique has been improved in connection to maintain noble device properties. Processes incorporated to nano range fabrication are always intricate, as various quantum size effects play important role in this regime. Understanding the physics of low-dimensional systems and the operation of next-generation electronics will be helpful in bringing revolutionary changes to mankind. Phenomena surrounding the nanoparticles have been discussed and the discussion has been divided into two broad categories: synthesis and characterization of the nanoparticles embedded MOS capacitor. Capacitance peaks in the inversion region due to carrier tunneling into the quantum dot and Coulomb blockade charging in quantum dot has been observed, which elucidated the charge storing phenomena of nanoparticles.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 56 pp. Englisch.…

Paperback. Condizione: new. Paperback. Die Entwicklung von elektronischen Bauelementen mit niedrigerer Dimension hat in der heutigen Welt enorm an Bedeutung gewonnen. Die Miniaturisierungstechniken wurden weiterentwickelt, um die hervorragenden Eigenschaften der Bauelemente zu erhalten. Die bei der Fertigung im Nanobereich eingesetzten Verfahren sind stets komplex, da in diesem Bereich verschiedene Quantengroessen-Effekte eine wichtige Rolle spielen. Das Verstaendnis der Physik niedrigdimensionaler Systeme und der Funktionsweise der Elektronik der naechsten Generation wird dazu beitragen, revolutionaere Veraenderungen fuer die Menschheit herbeizufuehren. Die Phaenomene rund um Nanopartikel wurden eroertert, wobei die Diskussion in zwei grosse Kategorien unterteilt wurde: die Synthese und die Charakterisierung von MOS-Kondensatoren mit eingebetteten Nanopartikeln. Es wurden Kapazitaetsspitzen im Inversionsbereich beobachtet, die auf den Tunnel-Effekt von Ladungstraegern in den Quantenpunkt und die Coulomb-Blockade-Aufladung im Quantenpunkt zurueckzufuehren sind, was die Ladungsspeicherphaenomene von Nanopartikeln verdeutlichte. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.…