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Resistive Random Access Memory (RRAM) (Paperback)
Lingua: Inglese
Editore: Springer International Publishing AG, Cham, 2016
ISBN 10: 3031009029 ISBN 13: 9783031009020
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Valutazione del venditore 5 su 5 stelle
Paperback. Condizione: new. Paperback. RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAMs potential novel applications beyond the NVM applications. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Resistive Random Access Memory (RRAM) (Synthesis Lectures on Emerging Engineering Technologies)
Lingua: Inglese
Editore: Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Da: Our Kind Of Books, Liphook, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 12,12
Spedizione EUR 26,06
Spedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloSoft cover. Condizione: As New. This book has been in storage since publication and is unread. Hence the description as new. Synopsis: RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.
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Resistive Random Access Memory (RRAM)
Da: Revaluation Books, Exeter, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 30,28
Spedizione EUR 11,77
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 78 pages. 9.25x7.51x9.25 inches. In Stock.
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Resistive Random Access Memory (RRAM)
Lingua: Inglese
Editore: Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 80.
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Resistive Random Access Memory (RRAM)
Lingua: Inglese
Editore: Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Da: Majestic Books, Hounslow, Regno Unito
Valutazione del venditore 4 su 5 stelle
EUR 38,05
Spedizione EUR 7,65
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloCondizione: New. pp. 80.
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Resistive Random Access Memory (RRAM) (Synthesis Lectures on Emerging Engineering Technologies)
Lingua: Inglese
Editore: Morgan & Claypool Publishers (edition ), 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Da: BooksRun, Philadelphia, PA, U.S.A.
Valutazione del venditore 5 su 5 stelle
Paperback. Condizione: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
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Resistive Random Access Memory (RRAM) (Synthesis Lectures on Emerging Engineering Technologies)
Lingua: Inglese
Editore: Morgan & Claypool Publishers (edition ), 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Da: BooksRun, Philadelphia, PA, U.S.A.
Valutazione del venditore 5 su 5 stelle
Paperback. Condizione: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
-
Resistive Random Access Memory (RRAM) (Synthesis Lectures on Emerging Engineering Technologies)
Lingua: Inglese
Editore: Morgan & Claypool Publishers (edition ), 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Da: BooksRun, Philadelphia, PA, U.S.A.
Valutazione del venditore 5 su 5 stelle
Paperback. Condizione: New. The item is brand new, never used or read. It's in perfect condition and may include supplements and/or access codes or come shrink-wrapped.
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Resistive Random Access Memory (RRAM) (Synthesis Lectures on Emerging Engineering Technologies)
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. 1st edition NO-PA16APR2015-KAP.
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Resistive Random Access Memory (RRAM)
Lingua: Inglese
Editore: Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Da: Biblios, Frankfurt am main, HESSE, Germania
Valutazione del venditore 4 su 5 stelle
EUR 38,91
Spedizione EUR 9,95
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloCondizione: New. pp. 80.
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RESISTIVE RANDOM ACCESS MEMORY
Lingua: Inglese
Editore: Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Da: Basi6 International, Irving, TX, U.S.A.
Valutazione del venditore 5 su 5 stelle
Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Semiconductor Memory Devices and Circuits
Da: GreatBookPrices, Columbia, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
Condizione: New.
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Semiconductor Memory Devices and Circuits
Da: PBShop.store US, Wood Dale, IL, U.S.A.
Valutazione del venditore 5 su 5 stelle
PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.
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Semiconductor Memory Devices and Circuits
Da: GreatBookPrices, Columbia, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
Condizione: As New. Unread book in perfect condition.
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Semiconductor Memory Devices and Circuits
Da: PBShop.store UK, Fairford, GLOS, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 63,82
Spedizione EUR 4,89
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloPAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.
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Semiconductor Memory Devices and Circuits
Da: California Books, Miami, FL, U.S.A.
Valutazione del venditore 4 su 5 stelle
EUR 73,01
Spedizione gratuita
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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Semiconductor Memory Devices and Circuits
Lingua: Inglese
Editore: Taylor and Francis Ltd, GB, 2025
ISBN 10: 0367687151 ISBN 13: 9780367687151
Da: Rarewaves.com USA, London, LONDO, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 73,96
Spedizione gratuita
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics. Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET Explores the new applications such as in-memory computing for AI hardware acceleration.
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Semiconductor Memory Devices and Circuits
Da: Majestic Books, Hounslow, Regno Unito
Valutazione del venditore 4 su 5 stelle
EUR 67,61
Spedizione EUR 7,65
Spedito da Regno Unito a U.S.A.Quantità: 3 disponibili
Aggiungi al carrelloCondizione: New.
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Semiconductor Memory Devices and Circuits
Da: GreatBookPricesUK, Woodford Green, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 58,83
Spedizione EUR 17,65
Spedito da Regno Unito a U.S.A.Quantità: 10 disponibili
Aggiungi al carrelloCondizione: New.
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Semiconductor Memory Devices and Circuits
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 66,53
Spedizione EUR 14,10
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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Semiconductor Memory Devices and Circuits
Da: Books Puddle, New York, NY, U.S.A.
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Condizione: New. First edition Includes bibliographical references and index.
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Semiconductor Memory Devices and Circuits
Da: Chiron Media, Wallingford, Regno Unito
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EUR 63,53
Spedizione EUR 18,22
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrellopaperback. Condizione: New.
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Semiconductor Memory Devices and Circuits
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Valutazione del venditore 5 su 5 stelle
EUR 71,50
Spedizione EUR 10,50
Spedito da Irlanda a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloCondizione: New.
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Semiconductor Memory Devices and Circuits
Da: THE SAINT BOOKSTORE, Southport, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 66,70
Spedizione EUR 17,98
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloPaperback / softback. Condizione: New. New copy - Usually dispatched within 4 working days.
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Semiconductor Memory Devices and Circuits
Da: GreatBookPricesUK, Woodford Green, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 67,26
Spedizione EUR 17,65
Spedito da Regno Unito a U.S.A.Quantità: 10 disponibili
Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
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Resistive Random Access Memory (RRAM) (Paperback)
Lingua: Inglese
Editore: Springer International Publishing AG, Cham, 2016
ISBN 10: 3031009029 ISBN 13: 9783031009020
Da: AussieBookSeller, Truganina, VIC, Australia
Valutazione del venditore 5 su 5 stelle
EUR 52,33
Spedizione EUR 32,38
Spedito da Australia a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: new. Paperback. RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAMs potential novel applications beyond the NVM applications. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
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Semiconductor Memory Devices and Circuits
Da: Biblios, Frankfurt am main, HESSE, Germania
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EUR 76,97
Spedizione EUR 9,95
Spedito da Germania a U.S.A.Quantità: 3 disponibili
Aggiungi al carrelloCondizione: New.
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Resistive Random Access Memory (RRAM)
Lingua: Inglese
Editore: Springer International Publishing, 2016
ISBN 10: 3031009029 ISBN 13: 9783031009020
EUR 29,95
Spedizione EUR 60,85
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM's potential novel applications beyond the NVM applications.
-
Semiconductor Memory Devices and Circuits
Da: Kennys Bookstore, Olney, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
Condizione: New.
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EUR 29,15
Spedizione EUR 70,00
Spedito da Germania a U.S.A.Quantità: 5 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Resistive Random Access Memory (RRAM) | Shimeng Yu | Taschenbuch | Synthesis Lectures on Emerging Engineering Technologies | vii | Englisch | 2016 | Springer | EAN 9783031009020 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
