Yu shimeng (121 risultati)
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Da: Grand Eagle Retail, Bensenville, IL, U.S.A.Grand Eagle Retail
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Paperback. Condizione: new. Paperback. RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art… RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAMs potential novel applications beyond the NVM applications. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Da: Revaluation Books, Exeter, , Regno UnitoRevaluation Books
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EUR 29,83
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Paperback. Condizione: Brand New. 78 pages. 9.25x7.51x9.25 inches. In Stock.
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Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, , GermaniaUniversitätsbuchhandlung Herta Hold GmbH
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xi, 269 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 41,44
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Condizione: New. pp. 80.
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Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, , GermaniaUniversitätsbuchhandlung Herta Hold GmbH
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viii, 245 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.
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Da: BooksRun, Philadelphia, PA, U.S.A.BooksRun
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EUR 46,55
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Paperback. Condizione: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
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Da: BooksRun, Philadelphia, PA, U.S.A.BooksRun
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Paperback. Condizione: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
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Da: BooksRun, Philadelphia, PA, U.S.A.BooksRun
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Paperback. Condizione: New. The item is brand new, never used or read. It's in perfect condition and may include supplements and/or access codes or come shrink-wrapped.
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condizione: New. 1st edition NO-PA16APR2015-KAP.
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Da: Our Kind Of Books, Liphook, Regno UnitoOur Kind Of Books
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Soft cover. Condizione: As New. This book has been in storage since publication and is unread. Hence the description as new. Synopsis: RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal ox…ide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.
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Da: Basi6 International, Irving, TX, U.S.A.Basi6 International
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EUR 53,03
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Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Condizione: New.
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Da: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
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EUR 63,44
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PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.
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Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Da: PBShop.store UK, Fairford, GLOS, Regno UnitoPBShop.store UK
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EUR 60,60
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PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.
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Da: Speedyhen LLC, Hialeah, FL, U.S.A.Speedyhen LLC
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Condizione: NEW.
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Da: Rarewaves.com USA, London, LONDO, Regno UnitoRarewaves.com USA
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EUR 69,87
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Paperback. Condizione: New. This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book… discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics. Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET Explores the new applications such as in-memory computing for AI hardware acceleration.
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Da: Majestic Books, Hounslow, , Regno UnitoMajestic Books
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EUR 64,19
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- Brossura
Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK
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EUR 55,94
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Da: Chiron Media, Wallingford, , Regno UnitoChiron Media
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EUR 60,16
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paperback. Condizione: New.
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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EUR 65,54
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Condizione: New. In.
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 76,20
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Condizione: New. First edition Includes bibliographical references and index.
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Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK
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EUR 63,96
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Da: THE SAINT BOOKSTORE, Southport, , Regno UnitoTHE SAINT BOOKSTORE
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EUR 63,36
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Paperback / softback. Condizione: New. New copy - Usually dispatched within 4 working days.
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Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, IrlandaKennys Bookshop and Art Galleries Ltd.
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EUR 71,50
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Condizione: New.
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Da: AussieBookSeller, Truganina, VIC, AustraliaAussieBookSeller
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Paperback. Condizione: new. Paperback. RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art… RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAMs potential novel applications beyond the NVM applications. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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EUR 74,11
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Condizione: New.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to… array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM's potential novel applications beyond the NVM applications.
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Da: Kennys Bookstore, Olney, MD, U.S.A.Kennys Bookstore
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EUR 89,61
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Condizione: New.
Altre immagini- Brossura
Da: preigu, Osnabrück, Germaniapreigu
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EUR 29,10
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Taschenbuch. Condizione: Neu. Resistive Random Access Memory (RRAM) | Shimeng Yu | Taschenbuch | Synthesis Lectures on Emerging Engineering Technologies | vii | Englisch | 2016 | Springer | EAN 9783031009020 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]sp…ringer[dot]com | Anbieter: preigu.
