shun cheng hsu (11 risultati)

Trade paperback, 112 pages. Condizione: Very good. Light wear and soiling to cover, slight creasing to corners. Light soiling to text block edges. Pages appear free of writing / highlighting. In nice shape.

Soft cover. Condizione: Very Good. Very Good condition in paperback with a bump at the lower right corner, we ship in boxes, not bags, LOC1.

Condizione: New. pp. 132.

Taschenbuch. Condizione: Neu. Improved Performance of AlGaInP LEDs Using Various Process Techniques | The main purpose of this book is to improve external quantum efficiency of LEDs by investigating several different fabrication methods | Shun-Cheng Hsu | Taschenbuch | 132 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783843358361 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional wavelike surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact. 132 pp. Englisch.

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Hsu Shun-ChengShun-Cheng Hsu received Ph.D. degree in deparment of materials science and egineering from National Chung Hsing University, Taiwan, R.O.C. in 2009.Recently, based on the significant improvement on epitaxy techniq.

Condizione: New. Print on Demand pp. 132 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Condizione: New. PRINT ON DEMAND pp. 132.

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional 'wavelike' surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 132 pp. Englisch.

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional wavelike surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact.