vjacheslav kharchenko (11 risultati)

Condizione: new. Pages: 350 Language: Russian. Ot svoej prirody ne ujti. Liricheskij geroj knigi Vjacheslava Kharchenko polzhizni khotel pereekhat v Krym. I vot ego mechta sbylas: on obosnovalsja tam, gde pleschetsja laskovoe more, gde vyzrevajut masliny, a kiparisy prakticheski ne ukryvajut ot solntsa, kotoroe svetit 365 dnej v godu. Detskij vostorg? Neverojatnye emotsii? Vprochem, dazhe pod juzhnym nebom rasskazchik ostajotsja soboj - izvestnym moskovskim prozaikom, kotoryj s ljogkostju i jumorom sobiraet svezhie vpechatlenija. Novyj sbornik priznannogo mastera korotkoj formy Vjacheslava Kharchenko - o tom, chto chelovek mozhet izmenit i pochemu v etom mire nichego ne menjaetsja. Kniga "Moskvich v Juzhnom gorode" poluchila spetsialnyj diplom premii imeni Fazilja Iskandera russkogo PEN-tsentra. 9785604756690.

Taschenbuch. Condizione: Neu. Neuware -The monograph discusses the physical foundations of a new method of doping semiconductors, the basic element of which is nuclear reactions that occur in the volume of a semiconductor under the influence of fast charged particles, neutrons, high-energy gamma radiation, as well as the inevitably occurring side effects - the formation of radiation defects, the kinetics of their accumulation and annealing. Detailed data are presented on the technology of uniform irradiation of bulk ingots with neutrons depending on the specific design of the nuclear reactor, the medium and modes of annealing of radiation defects, the requirements for the starting material, and the electrophysical properties of doped silicon crystals are considered. The sources of radioactive contamination of the ingots during the irradiation process and the technological methods of their deactivation to a safe level are analyzed.The monograph is designed for scientists and production personnel interested in the problems of solid state radiation physics and radiation materials science of semiconductors and devices based on them, as well as graduate students and students of relevant specialties. 252 pp. Englisch.

Condizione: New.

Taschenbuch. Condizione: Neu. Nuclear Doping of Semiconductor Materials | Vjacheslav Kharchenko | Taschenbuch | 252 S. | Englisch | 2020 | LAP LAMBERT Academic Publishing | EAN 9786200486431 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Condizione: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | The monograph discusses the physical foundations of a new method of doping semiconductors, the basic element of which is nuclear reactions that occur in the volume of a semiconductor under the influence of fast charged particles, neutrons, high-energy gamma radiation, as well as the inevitably occurring side effects - the formation of radiation defects, the kinetics of their accumulation and annealing. Detailed data are presented on the technology of uniform irradiation of bulk ingots with neutrons depending on the specific design of the nuclear reactor, the medium and modes of annealing of radiation defects, the requirements for the starting material, and the electrophysical properties of doped silicon crystals are considered. The sources of radioactive contamination of the ingots during the irradiation process and the technological methods of their deactivation to a safe level are analyzed.The monograph is designed for scientists and production personnel interested in the problems of solid state radiation physics and radiation materials science of semiconductors and devices based on them, as well as graduate students and students of relevant specialties.

paperback. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condizione: New. Print on Demand.

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Kharchenko VjacheslavVyacheslav Aleksandrovich Kharchenko, engineer - physicist, doctor of technical sciences. He completed a series of research works on the development of a new technology for doping semiconductors using nuclear rea.

Condizione: New. PRINT ON DEMAND.

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The monograph discusses the physical foundations of a new method of doping semiconductors, the basic element of which is nuclear reactions that occur in the volume of a semiconductor under the influence of fast charged particles, neutrons, high-energy gamma radiation, as well as the inevitably occurring side effects - the formation of radiation defects, the kinetics of their accumulation and annealing. Detailed data are presented on the technology of uniform irradiation of bulk ingots with neutrons depending on the specific design of the nuclear reactor, the medium and modes of annealing of radiation defects, the requirements for the starting material, and the electrophysical properties of doped silicon crystals are considered. The sources of radioactive contamination of the ingots during the irradiation process and the technological methods of their deactivation to a safe level are analyzed.The monograph is designed for scientists and production personnel interested in the problems of solid state radiation physics and radiation materials science of semiconductors and devices based on them, as well as graduate students and students of relevant specialties.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 252 pp. Englisch.

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The monograph discusses the physical foundations of a new method of doping semiconductors, the basic element of which is nuclear reactions that occur in the volume of a semiconductor under the influence of fast charged particles, neutrons, high-energy gamma radiation, as well as the inevitably occurring side effects - the formation of radiation defects, the kinetics of their accumulation and annealing. Detailed data are presented on the technology of uniform irradiation of bulk ingots with neutrons depending on the specific design of the nuclear reactor, the medium and modes of annealing of radiation defects, the requirements for the starting material, and the electrophysical properties of doped silicon crystals are considered. The sources of radioactive contamination of the ingots during the irradiation process and the technological methods of their deactivation to a safe level are analyzed.The monograph is designed for scientists and production personnel interested in the problems of solid state radiation physics and radiation materials science of semiconductors and devices based on them, as well as graduate students and students of relevant specialties.