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Aggiungi al carrelloHRD. Condizione: New. New Book. Shipped from UK. Established seller since 2000.
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Aggiungi al carrelloHardback. Condizione: New. New copy - Usually dispatched within 4 working days.
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Aggiungi al carrelloGebunden. Condizione: New. Provides a clear picture of layout and design of digital, analog, radio frequency and power applications for protection from electrostatic discharge, electrical overstress, and latchup phenomena from a generalist perspective and design synthesis practices. .
Lingua: Inglese
Editore: John Wiley, 2012
Da: Books in my Basket, New Delhi, India
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Aggiungi al carrelloHardcover. Condizione: New. ISBN:9780470979716.
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Aggiungi al carrelloGebunden. Condizione: New. Dr Steven H. Voldman, IEEE Fellow, Vermont, USADr. Steven H. Voldman is the first IEEE Fellow in the field of electrostatic discharge (ESD) for Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon Germanium Technology. Voldman was a m.
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Aggiungi al carrelloCondizione: New. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 6-10 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.
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Aggiungi al carrelloGebunden. Condizione: New. With the growth of high-speed telecommunications and wireless technology, it is becoming increasingly important for engineers to understand radio frequency (RF) applications and their sensitivity to electrostatic discharge (ESD) phenomena. This enables the .
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Aggiungi al carrelloGebunden. Condizione: New. Dr Steven H. Voldman received his B.S. in Engineering Science from the University of Buffalo (1979) M.S. EE (1981) and Electrical Engineer Degree (1982) from M.I.T MS Engineering Physics (1986) and Ph.D EE (1991) from the University of Vermont under IBM s.
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Aggiungi al carrelloGebunden. Condizione: New. Steven H. Voldman, IEEE Fellow, Vermont, USAElectrostatic discharge (ESD) continues to impact semiconductor components and systems as technologies scale from micro- to nanoelectronics. ESD Analog Circuits and Design provides a clear picture of layout an.
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Aggiungi al carrelloGebunden. Condizione: New. Steven H. Voldman is an IEEE Fellow for Contributions in ESD Protection in CMOS, Silicon on Insulator and Silicon Germanium Technology . He has a B.S. engineering science from University of Buffalo (1979), a first M.S. EE (1981) from Massachusetts Institut.
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Aggiungi al carrelloGebunden. Condizione: New. Addresses Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. This book provides a treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. It contai.