Da: Books From California, Simi Valley, CA, U.S.A.
hardcover. Condizione: Very Good.
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 121,62
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Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 113,21
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Aggiungi al carrelloCondizione: New.
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 118,60
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Aggiungi al carrelloCondizione: New. In.
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 131,93
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 132,01
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Prima edizione
EUR 149,56
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. 2024. 1st Edition. hardcover. . . . . .
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New.
EUR 187,15
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. 2024. 1st Edition. hardcover. . . . . . Books ship from the US and Ireland.
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 249,22
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Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 249,22
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Aggiungi al carrelloCondizione: New. In.
hardcover. Condizione: New. In shrink wrap. Looks like an interesting title!
Lingua: Inglese
Editore: Kluwer Academic Publishers, 1993
ISBN 10: 0792393791 ISBN 13: 9780792393795
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
EUR 291,90
Quantità: 15 disponibili
Aggiungi al carrelloCondizione: New. Presents a discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 373 pages, biography. BIC Classification: TBC; TJFD. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 22. Weight in Grams: 730. . 1993. Hardback. . . . .
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 244,86
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model .
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 315,20
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Like New. Like New. book.
Lingua: Inglese
Editore: Kluwer Academic Publishers, 1993
ISBN 10: 0792393791 ISBN 13: 9780792393795
Da: Kennys Bookstore, Olney, MD, U.S.A.
Condizione: New. Presents a discourse on process and device CAD as interrelated subjects, building on a wide range of experiences and applications of the SUPREM program. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 373 pages, biography. BIC Classification: TBC; TJFD. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 22. Weight in Grams: 730. . 1993. Hardback. . . . . Books ship from the US and Ireland.
Editore: Wiley-IEEE Press
Da: Academic Book Solutions, Medford, NY, U.S.A.
hardcover. Condizione: VeryGood. A copy that may have been read, very minimal wear and tear. May have a remainder mark.
Editore: Springer, New York, 2012
Da: 32.1 Rare Books + Ephemera, IOBA, ESA, Princeton, NJ, U.S.A.
Membro dell'associazione: IOBA
Hardcover. Condizione: Very Good. 8vo., 396 pp. Black and white illustrations. Index.
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 139,05
Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model . 396 pp. Englisch.
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 197,94
Quantità: 2 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model . 400 pp. Englisch.
Da: moluna, Greven, Germania
EUR 197,62
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 .
Da: moluna, Greven, Germania
EUR 197,62
Quantità: Più di 20 disponibili
Aggiungi al carrelloGebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 .