Lingua: Inglese
Editore: Morgan & Claypool Publishers, 2016
ISBN 10: 1627052941 ISBN 13: 9781627052948
Da: suffolkbooks, Center moriches, NY, U.S.A.
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Lingua: Inglese
Editore: Morgan & Claypool (Synthesis Lectures on Emerging Engineering Technologies), [San Raphael, CA], 2017
ISBN 10: 1627052941 ISBN 13: 9781627052948
Da: Philip Gibbons Books, Newcastle Emlyn, Regno Unito
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Lingua: Inglese
Editore: Morgan & Claypool Publishers, 2016
ISBN 10: 1627052941 ISBN 13: 9781627052948
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 111,56
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Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. pp. x + 192.
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. pp. 192.
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Aggiungi al carrellohardcover. Condizione: Sehr gut. 202 Seiten; 9781493905508.2 Gewicht in Gramm: 1.
Da: Revaluation Books, Exeter, Regno Unito
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Aggiungi al carrelloHardcover. Condizione: Brand New. 2014 edition. 192 pages. 9.25x6.25x0.50 inches. In Stock.
Lingua: Inglese
Editore: Springer New York, Springer US, 2014
ISBN 10: 1493905503 ISBN 13: 9781493905508
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 111,53
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Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.- Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices;- Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization;- Provides both theoretical analysis and practical examples to illustrate design methodologies;- Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.
Lingua: Inglese
Editore: Springer New York, Springer US, 2016
ISBN 10: 1493954970 ISBN 13: 9781493954971
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 112,77
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.- Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices;- Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization;- Provides both theoretical analysis and practical examples to illustrate design methodologies;- Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.
EUR 83,44
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Aggiungi al carrelloCondizione: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. ¿ Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; ¿ Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; ¿ Provides both theoretical analysis and practical examples to illustrate design methodologies; ¿ Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.
Lingua: Inglese
Editore: Burleigh Dodds Science Publishing, 2025
ISBN 10: 1801468788 ISBN 13: 9781801468787
Da: California Books, Miami, FL, U.S.A.
EUR 201,29
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Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 192,26
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Aggiungi al carrelloPaperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Lingua: Inglese
Editore: Burleigh Dodds Science Publishing, 2025
ISBN 10: 1801468788 ISBN 13: 9781801468787
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 215,79
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Lingua: Inglese
Editore: Burleigh Dodds Science Publishing, 2025
ISBN 10: 1801468788 ISBN 13: 9781801468787
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New.
Lingua: Inglese
Editore: Burleigh Dodds Science Publishing, 2025
ISBN 10: 1801468788 ISBN 13: 9781801468787
Da: Majestic Books, Hounslow, Regno Unito
EUR 332,32
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Lingua: Inglese
Editore: Burleigh Dodds Science Publishing, 2025
ISBN 10: 1801468788 ISBN 13: 9781801468787
Da: Biblios, Frankfurt am main, HESSE, Germania
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