9780521024457 - Photo-induced Defects Semiconductrs di Redfield, David (17 risultati)

Softcover/Paperback. Condizione: Sehr gut. x, 217 p. Very good. Shrink wrapped. / Sehr guter Zustand. In Folie verschweißt. Sprache: Englisch Gewicht in Gramm: 371.

Condizione: Very Good.

Condizione: Good. Used - Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre.' Ex-library, but has been well cared for. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.

Condizione: New.

Condizione: New. In.

Paperback. Condizione: New.

Condizione: New. A thorough review of the properties of deep-level, localized defects in semiconductors. Series Editor(s): Ahmad, Haroon; Pepper, Michael; Broers, Alec. Series: Cambridge Studies in Semiconductor Physics & Microelectronic Engineering. Num Pages: 232 pages, 106 b/w illus. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational. Dimension: 229 x 152 x 13. Weight in Grams: 350. . 2008. 1st Edition. paperback. . . . .

Condizione: New. A thorough review of the properties of deep-level, localized defects in semiconductors. Series Editor(s): Ahmad, Haroon; Pepper, Michael; Broers, Alec. Series: Cambridge Studies in Semiconductor Physics & Microelectronic Engineering. Num Pages: 232 pages, 106 b/w illus. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational. Dimension: 229 x 152 x 13. Weight in Grams: 350. . 2008. 1st Edition. paperback. . . . . Books ship from the US and Ireland.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Paperback. Condizione: new. Paperback. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in IIIV compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Paperback. Condizione: Brand New. 1st edition. 217 pages. 8.75x6.00x0.50 inches. In Stock. This item is printed on demand.

Condizione: New. Print on Demand pp. 232 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Condizione: New. Print on Demand pp. 232.

Condizione: New. PRINT ON DEMAND pp. 232.

Paperback / softback. Condizione: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.

Paperback. Condizione: new. Paperback. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in IIIV compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and st.