9780792377696 - compound semiconductors strained layers and devices: 7 (13 risultati)
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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Compound Semiconductors Strained Layers and Devices
. Ed(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van
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Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, IrlandaKennys Bookshop and Art Galleries Ltd.
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Condizione: New. Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined S…tark Effects. Editor(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van. Series: Electronic Materials Series. Num Pages: 349 pages, 8 black & white illustrations, biography. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 20. Weight in Grams: 669. . 2000. Hardback. . . . .
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condizione: New. pp. 352.
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Da: Buchpark, Trebbin, GermaniaBuchpark
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EUR 117,83
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Condizione: Gut. Zustand: Gut | Seiten: 356 | Sprache: Englisch | Produktart: Bücher | During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain.… 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 168,73
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-1999 ha…ve been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
Compound Semiconductors Strained Layers and Devices
. Ed(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van
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Da: Kennys Bookstore, Olney, MD, U.S.A.Kennys Bookstore
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EUR 256,70
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Condizione: New. Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined S…tark Effects. Editor(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van. Series: Electronic Materials Series. Num Pages: 349 pages, 8 black & white illustrations, biography. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 20. Weight in Grams: 669. . 2000. Hardback. . . . . Books ship from the US and Ireland.
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Da: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Condizione: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days.
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Da: moluna, Greven, Germaniamoluna
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EUR 136,16
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Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Preface. 1. Introduction. 2. Characterization and growth. 3. Strain and critical thickness. 4. Strain relaxation and defects. 5. Band structure and optical properties. 6. Electrical and magnetic properties.… 7. Strained layer optoelectronic devices. 8. T.
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Da: preigu, Osnabrück, Germaniapreigu
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Buch. Condizione: Neu. Compound Semiconductors Strained Layers and Devices | Suresh Jain (u. a.) | Buch | xii | Englisch | 2000 | Springer US | EAN 9780792377696 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Dem…and.
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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EUR 160,49
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Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain.…1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 356 pp. Englisch.
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Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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Condizione: New. Print on Demand pp. 352 Illus.
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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Condizione: New. PRINT ON DEMAND pp. 352.
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 223,63
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by stra…in. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them. 356 pp. Englisch.
